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An in-memory computing chip for vector–matrix multiplication and discrete signal processing applications can be fabricated using floating-gate field-effect transistors based on monolayer molybdenum disulfide.
A spiking neural network that is based on event-driven vision sensors can be created using two parallel photodiodes of opposite polarities that output programmable spike signal trains in response to changes in light intensity.
Ising- and Potts-model-based simulated annealing can be performed with photon-detector-based neuron circuits and used to solve a range of optimization problems.
An effective-gate-voltage-programmed graded-doping method can be used to reconfigure a single-gate molybdenum ditelluride device to different states, including a polarity-switchable diode, memory, Boolean logic and artificial synapse.
A model that predicts the force behaviour for solid/liquid-dielectric multilayer stacks independent of actuator design, and solely based on the material properties, can be used to develop actuators that provide a steady force output under constant-voltage operation.
Five-stage ring oscillators that operate at frequencies of up to 2.65 GHz can be created using monolayer molybdenum disulfide field-effect transistors developed with a design-technology co-optimization process.
A ternary metallic alloy VS2xSe2(1–x) that has a tunable work function can be grown using chemical vapour deposition and used as contacts for two-dimensional semiconductors.
Switching-current-based low-power transmitters with a high throughput can be created using an approach in which silicon-photonics-based Mach–Zehnder modulators and complementary metal–oxide–semiconductor electrical drivers are co-designed.
Industry compatible solid-state doping of regions between the channel and contacts in carbon nanotube transistors can be used to control device polarity and improve device performance.
Dual-gated van der Waals heterojunction transistors can provide Gaussian, sigmoid and mixed-kernel functions for use in low-power machine learning classification operations.
Out-of-plane polarized spin current generated by the Weyl semimetal tantalum iridium telluride can be used to achieve the field-free switching of the perpendicular magnetic anisotropy ferromagnet cobalt iron boron at room temperature.
A reconfigurable field-effect transistor based on a hexagonal boron nitride/rhenium diselenide/hexagonal boron nitride heterostructure can offer nonvolatile control of its channel conductivity via photoinduced trapping of electrons or holes at the bottom dielectric interface.
A low-power radio-frequency multiplexing cryo-electronics system, which is based on complementary metal–oxide–semiconductor technology, can operate below 15 mK and provide the control and interfacing of superconducting qubits with minimal cross-coupling.
A machine-learning-based model can be used to perform atomistic simulations of phase changes along the germanium–antimony–tellurium composition line, up to a full-size memory device model that contains half a million atoms.
Acoustically driven spin control of silicon monovacancies can be used to measure the resonant properties and dynamical strain distribution in lateral overtone bulk acoustic resonators.
A neuromorphic biosensor that consists of a sensor input layer, an array of organic neuromorphic devices (forming a hardware neural network) and an output classification layer can be trained on the chip to classify a model disease and then retrained on the chip by switching the sensor input signals.
A bioelectronic patch that is composed of three layers—an ionically conductive tissue adhesive, a viscoelastic networked film and a fatigue-resistant conducting composite—is capable of instantaneous and conformable tissue adhesion on a heart for precise cardiac monitoring and feedback stimulation.
Arbitrary problem graphs with up to 48 nodes can be efficiently and quickly solved by directly mapping onto a fully connected Ising chip that uses complementary-metal–oxide–semiconductor-based oscillators.
A wireless communication approach for neural implants that is based on electro-quasistatic signalling can offer end-to-end channel losses of only around 60 dB at a distance of around 55 mm.
A platform that integrates a ferroelectric gate and two-dimensional heterostructure of tungsten diselenide and tin diselenide can operate in various gating modes, demonstrating typical transistor, steep-slope transistor and synaptic behaviours.