Multilayers of hexagonal boron nitride can be grown using a chemical vapour deposition process on iron–nickel foil and integrated into a large array of graphene devices that exhibit room-temperature carrier mobilities of up to around 10,000 cm² V⁻¹ s⁻¹.

A thin and stretchable polymer layer can be fabricated over large areas with high uniformity using a vacuum-deposition method and used as the gate dielectric in stretchy carbon-nanotube-based transistors and circuits that can function at 40% strain.

Three-dimensional liquid metal structures can be created by manipulating ductile gallium–indium alloy wires that are then encapsulated in an elastomer and heated to recover their fluidity, and can remain in a liquid state for a range of temperatures due to a supercooling effect.

By engineering the upper and lower surfaces of micro-light-emitting-diode chips to have different van der Waals forces, hundreds and thousands of chips can be accurately aligned on substrates and used to create active-matrix displays.

Three-layer heterostructures consisting of an indium gallium arsenide semiconducting film, a lithium niobate piezoelectric film, and a silicon substrate can be used to create acoustoelectric amplifiers that operate at gigahertz frequencies with large non-reciprocal gain and low noise in continuous operation.

Long-range wireless data links can be created by combining a software-defined digital signal processing back end with on-chip high-power terahertz signal sources and broadband frequency mixers based on Schottky diode technology.

Five years of Nature Electronics.

Technology breakthroughs at the 2022 IEEE International Electron Devices Meeting, where transistors remain centre stage, 75 years after their invention.