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Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

Nature Electronics volume 7, pages 269–270 (2024)Cite this article

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The Original Article was published on 17 April 2024

replying to: V. Bruevich & V. Podzorov. Nature Electronics https://doi.org/10.1038/s41928-024-01154-8 (2024)

In response to our recent Article1, Bruevich and Podzorov2 raised concerns regarding the extraction of mobility from our perovskite thin-film transistor (TFT) transfer curves, potential Joule effects in our TFTs, and the differences between the estimated Hall and TFT hole concentration/mobility. Here we provide a response and additional details about our work.

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Fig. 1: Transfer characteristics of CsSnI3-based TFTs.

Data availability

The data that support the findings of this study are available from the corresponding authors upon reasonable request.

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Authors and Affiliations

  1. Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Republic of Korea

    Ao Liu, Huihui Zhu & Yong-Young Noh

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  1. Ao Liu
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  2. Huihui Zhu
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  3. Yong-Young Noh
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A.L., H.Z. and Y.-Y.N. wrote the paper.

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Correspondence to Ao Liu or Yong-Young Noh.

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Liu, A., Zhu, H. & Noh, YY. Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials. Nat Electron 7, 269–270 (2024). https://doi.org/10.1038/s41928-024-01155-7

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