Highlights from the 2023 IEEE International Electron Devices Meeting

Technology breakthroughs at the 2023 IEEE International Electron Devices Meeting, where collaboration and CMOS technology continue to play their part.

The integration of high-performance n-type and p-type two-dimensional transistors — which can be fabricated on 300 mm wafers using a die-by-die transfer process — is an important step in the lab-to-fab transition of two-dimensional semiconductors.

An industry-applicable fabrication flow for complementary field-effect transistors could pave the way for future logic scaling.

Stochastic magnetic tunnel junctions can be used to create energy-efficient neural networks with confidence estimations.

A 3D stackable computing-in-memory array that is based on resistive random-access memory could accelerate the implementation of machine learning algorithms.

The monolithic integration of photonic and electronic technology can be used to create miniaturized implantable microsystems capable of high-resolution optical neural control and electrical recording in deep brain regions.