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Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

Matters Arising to this article was published on 17 April 2024

The Original Article was published on 17 February 2022

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Fig. 1: Replotted and original transfer characteristics of the optimized CsSnI3 FET from ref. 1.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

References

  1. Liu, A. et al. High-performance inorganic metal halide perovskite transistors. Nat. Electron. 5, 78–83 (2022).

    Article  Google Scholar 

  2. Horowitz, G. in Organic Electronics Advances in Polymer Science Vol. 223 (eds Grasser, T. et al.) 113–153 (Springer, 2010).

  3. McCulloch, I., Salleo, A. & Chabinyc, M. Avoid the kinks when measuring mobility. Science 352, 1521–1522 (2016).

    Article  Google Scholar 

  4. Choi, H. H., Cho, K., Frisbie, C. D., Sirringhaus, H. & Podzorov, V. Critical assessment of charge mobility extraction in FETs. Nat. Mater. 17, 2–7 (2018).

    Article  Google Scholar 

  5. Mitzi, D. B., Feild, C. A., Schlesinger, Z. & Laibowitz, R. B. Transport, optical and magnetic properties of the conducting halide perovskite CH3NH3SnI3. J. Solid State Chem. 114, 159–163 (1995).

    Article  Google Scholar 

  6. Podzorov, V. Tutorial lecture ‘Organic Single Crystals 101’, slides 33–34, Fall 2011 MRS meeting, Boston MA, USA. Zenodo https://doi.org/10.5281/zenodo.1048409 (2017).

  7. Yi, H. T., Chen, Y., Czelen, K. & Podzorov, V. Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors. Adv. Mater. 23, 5807–5811 (2011).

    Article  Google Scholar 

  8. Liu, C. et al. Device physics of contact issues for the overestimation and underestimation of carrier mobility in field-effect transistors. Phys. Rev. Appl. 8, 034020 (2017).

    Article  Google Scholar 

  9. Pang, C.-S. et al. Mobility extraction in 2D transition metal dichalcogenide devices - avoiding contact resistance implicated overestimation. Small 17, 2100940 (2021).

    Article  Google Scholar 

  10. Meijer, E. J. et al. Switch-on voltage in disordered organic field-effect transistors. Appl. Phys. Lett. 80, 3838–3840 (2002).

    Article  Google Scholar 

  11. Völkel, A. R., Street, R. A. & Knipp, D. Carrier transport and density of state distributions in pentacene transistors. Phys. Rev. B 66, 195336 (2002).

    Article  Google Scholar 

  12. Benor, A., Hoppe, A., Wagner, V. & Knipp, D. Electrical stability of pentacene thin film transistors. Org. Electron. 8, 749–758 (2007).

    Article  Google Scholar 

  13. Bruevich, V. et al. Intrinsic (trap-free) transistors based on epitaxial single-crystal perovskites. Adv. Mater. 34, 2205055 (2022).

    Article  Google Scholar 

  14. Orton, J. W. & Powell, M. J. The Hall effect in polycrystalline and powdered semiconductors. Rep. Prog. Phys. 43, 1263–1307 (1980).

    Article  Google Scholar 

  15. Choi, H. H. et al. Hall effect in polycrystalline organic semiconductors: the effect of grain boundaries. Adv. Funct. Mater. 30, 1903617 (2020).

    Article  Google Scholar 

Download references

Acknowledgements

V.B. and V.P. acknowledge partial support for their research via the Donald H. Jacobs Chair in Applied Physics at Rutgers University.

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V.B. and V.P. performed the analysis of the published data and wrote the manuscript.

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Correspondence to Vitaly Podzorov.

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Supplementary Discussion (Sections 1–3), with three equations and 15 references.

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Podzorov, V., Bruevich, V. Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials. Nat Electron 7, 266–268 (2024). https://doi.org/10.1038/s41928-024-01154-8

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