Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) Italy

Research

Date range: 1 June 2022 - 31 May 2023

Region: Global
Subject/journal group: All

The table to the right includes counts of all research outputs for Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) published between 1 June 2022 - 31 May 2023 which are tracked by the Nature Index.

Hover over the donut graph to view the Share for each subject. Below, the same research outputs are grouped by subject. Click on the subject to drill-down into a list of articles organized by journal, and then by title.

Note: Articles may be assigned to more than one subject area.

Article Count and Share for Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)
Count Share
1 0.20

Outputs by subject (Share)

Outputs by subject
Subject Count Share
1 0.20
1 0.20

Share output for the past 5 years

Share per year
2018 2019 2020 2021 2022*
0.76 0.67 0.67 1.45 0.90

Compare Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) with other institutions

*Note: 2022 data contains Share for article affiliations from newly added health-science journals.

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Collaboration

Date range: 1 June 2022 - 31 May 2023

International vs. domestic collaboration by Share

  • 8.10% Domestic (2 institutions)
  • 91.90% International (28 institutions)

Hover over the graph to view the percentage of collaboration.

Top 10 domestic collaborators with Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) by Share*

  1. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and Polytechnic University of Milan (0.30)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    Polytechnic University of Milan0.10
  2. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and University of Milano-Bicocca (UNIMIB) (0.30)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    University of Milano-Bicocca (UNIMIB)0.10

Top 10 international collaborators with Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) by Share*

  1. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and University of Sherbrooke (USherbrooke) (0.49)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    University of Sherbrooke (USherbrooke)0.29
  2. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and Laboratoire Nanotechnologies Nanosystèmes (LN2) (0.45)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    Laboratoire Nanotechnologies Nanosystèmes (LN2)0.25
  3. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and McMaster University (0.35)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    McMaster University0.15
  4. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and Center for Nanosciences and Nanotechnologies (C2N) (0.30)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    Center for Nanosciences and Nanotechnologies (C2N)0.10
  5. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and French National Centre for Scientific Research (CNRS) (0.29)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    French National Centre for Scientific Research (CNRS)0.09
  6. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and Canadian Light Source Inc. (0.25)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    Canadian Light Source Inc.0.05
  7. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and University of Paris-Saclay (0.25)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    University of Paris-Saclay0.05
  8. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and École Centrale Lyon (0.24)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    École Centrale Lyon0.04
  9. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and National Institute of Applied Sciences (INSA) (0.24)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    National Institute of Applied Sciences (INSA)0.04
  10. Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) and École Supérieure de Chimie Physique Électronique de Lyon or (CPE Lyon) (0.24)
    Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS)0.20
    École Supérieure de Chimie Physique Électronique de Lyon or (CPE Lyon)0.04

*Share is the fractional count allocated to an institution for an article that takes into account the percentage of authors from that institution and the number of affiliated institutions that contributed to the article. The horizontal stacked bar charts above indicate the Share contributed by each institution in the bilateral collaboration. If the Share is not shown, hover over the bar to display it.

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Relationships

Partner Institutions

Laboratory for Nanostructure Epitaxy and Spintronics on Silicon (L-NESS) is a research collaboration whose article contributions are accrued to its participating partner institutions below.


Numerical information only is licensed under a Creative Commons Attribution-NonCommercial-ShareAlike 4.0 International License.