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The integration of high-performance n-type and p-type two-dimensional transistors — which can be fabricated on 300 mm wafers using a die-by-die transfer process — is an important step in the lab-to-fab transition of two-dimensional semiconductors.
A 3D stackable computing-in-memory array that is based on resistive random-access memory could accelerate the implementation of machine learning algorithms.
The monolithic integration of photonic and electronic technology can be used to create miniaturized implantable microsystems capable of high-resolution optical neural control and electrical recording in deep brain regions.
A transfer technique that embeds a van der Waals interface of interest in a high-adhesion matrix can decouple the properties of the functional interface from the forces required for its fabrication, providing single-step material-to-device integration.
Processes to recapture and reuse organic electronic materials—including conductors, semiconductors and dielectrics—using non-toxic solvents allow flexible, wearable electronic devices to be recycled sustainably.
The mechanical properties of sheet-like devices can be transformed via thermal modulation from an elastic state suitable for smoothing out wrinkles formed during crumpling to a plastic state suitable for free-standing operation.
A spin–orbit torque efficiency of around 2.7 can be achieved in heterostructures based on the bismuthate BaPb1−xBixO3, which can be used to drive magnetization switching at current densities of 4 × 105 A cm−2.
Membranes made of metal-coated silicon nitride can be used to assemble van der Waals heterostructures without a polymer support layer, thus improving cleanliness and allowing assembly at more extreme temperature and vacuum conditions.
Through layer-by-layer mechanical peeling, the channel region of a multilayer black phosphorus transistor can be reduced to a monolayer thickness without degrading its lattice and while retaining a multilayer contact region.
A haptic interface that uses thermal, mechanical and electrotactile modes of stimulation to target different receptors in the skin can provide users with diverse haptic sensations, reproducing the tactile information of fine roughness, macro roughness, slipperiness, force and temperature.
Rhombohedral-stacked molybdenum disulfide with sliding ferroelectric behaviour can be used to create atomically thin ferroelectric transistors for computing-in-memory device applications.
Memristors based on electric-field-induced phase transitions between a semiconducting and conductive phase of molybdenum ditelluride can be improved by using stressed metal contacts to strain the material closer to the phase switching point.
The continuing advance of artificial intelligence requires initiatives to address the potential harms of the technology and efforts to develop new energy-efficient electronic hardware.