An industry-applicable fabrication flow for complementary field-effect transistors could pave the way for future logic scaling.
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Wang, Y. Nanosheet-based complementary transistors with a 48 nm pitch. Nat Electron 6, 933–934 (2023). https://doi.org/10.1038/s41928-023-01090-z
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DOI: https://doi.org/10.1038/s41928-023-01090-z