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Transistor scaling

Getting two-dimensional materials ready for industrial manufacturing

Nature Electronics volume 6, pages 931–932 (2023)Cite this article

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The integration of high-performance n-type and p-type two-dimensional transistors — which can be fabricated on 300 mm wafers using a die-by-die transfer process — is an important step in the lab-to-fab transition of two-dimensional semiconductors.

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Fig. 1: Key challenges in the lab-to-fab transition of 2D technology.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA

    Wenjuan Zhu

  2. Department of Physics and Astronomy, University of Nebraska–Lincoln, Lincoln, NE, USA

    Xia Hong

Authors
  1. Wenjuan Zhu
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  2. Xia Hong
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Correspondence to Wenjuan Zhu.

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The authors declare no competing interests.

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Zhu, W., Hong, X. Getting two-dimensional materials ready for industrial manufacturing. Nat Electron 6, 931–932 (2023). https://doi.org/10.1038/s41928-023-01094-9

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