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By incorporating oxygen into the chemical vapour deposition growth of molybdenum disulfide, sulfur vacancies can be passivated and contact resistances lowered.
Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.
This Review examines the scaling prospects of quantum computing systems based on silicon spin technology and how the different layers of such a computer could benefit from using complementary metal–oxide–semiconductor (CMOS) technology.
A monolithic three-dimensional integrated system based on CMOS logic, compute-in-memory and associative memory can be used to efficiently implement one-shot learning.
Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.
This Review examines the development of field-effect transistors based on two-dimensional materials and considers the challenges that need to be addressed for the devices to be incorporated into very large-scale integration (VLSI) technology.
This Perspective examines the development of integrated circuits based on layered two-dimensional materials, exploring where they are likely to first find commercial use and considers the challenges than need to be addressed to create highly scaled circuits.
Textile-integrated metamaterials can be used to propagate signals across the body, and between different people, allowing a network of sensors to be connected and powered.
A thin and rollable high-resolution image sensor can be created by placing solution-processed metal halide perovskite photodiodes over an amorphous indium gallium zinc oxide transistor backplane.
This Review examines the development of novel physical effects and materials for wireless power transfer, considering techniques based on coherent perfect absorption, parity–time symmetry and exceptional points, and on-site power generation, as well as the use of metamaterials and metasurfaces, and acoustic power transfer.
Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.
Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.
This Perspective explores the potential of an approach to neuromorphic electronics in which the functional synaptic connectivity map of a mammalian neuronal network is copied using a silicon neuro-electronic interface and then pasted onto a high-density three-dimensional network of solid-state memories.
This Review examines the development of emerging semiconductor materials—organic semiconductors, colloidal quantum dots and metal halide perovskites—for light-emitting diodes, considering efforts to improve modulation performance and device efficiency, as well as potential applications in on-chip interconnects and light fidelity (Li-Fi).
This Review examines the use of colloidal quantum dots in the development of next-generation electronics, including luminescent, optoelectronic, memory and thermoelectric devices.
