Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
The phase, frequency and amplitude of gigahertz acoustic waves can be electrically controlled in a lithium niobate waveguide at millikelvin temperatures.
Graphene can be used as a donor substrate to create van der Waals contacts between two-dimensional semiconductors and a variety of three-dimensional metal electrodes, including strongly adhering metals.
On-chip Floquet photonic topological insulators, which are based on switched-capacitor circulators, could be used to create hybrid electronic–photonic topological integrated circuits for emerging communication technologies.
A van der Waals integration approach can be used to deposit single-crystal strontium titanate on two-dimensional molybdenum disulfide and tungsten diselenide, creating high-performance n- and p-doped field-effect transistors.
Thin flakes of Cr5Te8, which exhibit a colossal anomalous Hall effect, can be synthesized using a phase-controlled chemical vapour deposition technique.
Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits.
Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.
Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm2 V–1 s–1.
By incorporating oxygen into the chemical vapour deposition growth of molybdenum disulfide, sulfur vacancies can be passivated and contact resistances lowered.
Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.
A monolithic three-dimensional integrated system based on CMOS logic, compute-in-memory and associative memory can be used to efficiently implement one-shot learning.
Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.
Textile-integrated metamaterials can be used to propagate signals across the body, and between different people, allowing a network of sensors to be connected and powered.
A thin and rollable high-resolution image sensor can be created by placing solution-processed metal halide perovskite photodiodes over an amorphous indium gallium zinc oxide transistor backplane.
Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.
Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.