Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm2 Vā1 sā1.
This is a preview of subscription content, access via your institution
Access options
Access Nature and 54 other Nature Portfolio journals
Get Nature+, our best-value online-access subscription
$29.99 /Ā 30Ā days
cancel any time
Subscribe to this journal
Receive 12 digital issues and online access to articles
$119.00 per year
only $9.92 per issue
Buy this article
- Purchase on Springer Link
- Instant access to full article PDF
Prices may be subject to local taxes which are calculated during checkout
References
Geis, M. W. et al. Phys. Status Solidi A 215, 1800681 (2018).
Kalish, R. J. Phys. D 40, 6467ā6478 (2007).
Maier, F., Riedel, M., Mantel, B., Ristein, J. & Ley, L. Phys. Rev. Lett. 85, 3472ā3475 (2000).
Ristein, J. Nature 430, 439ā441 (2004).
Chen, W., Qi, D., Gao, X. & Wee, A. T. S. Prog. Surf. Sci. 84, 279ā321 (2009).
Tordjman, M., Saguy, C., Bolker, A. & Kalish, R. Adv. Mater. Interf. 1, 1300155 (2014).
Crawford, K. G. et al. Sci. Rep. 8, 3342 (2018).
Tordjman, M., Weinfeld, K. & Kalish, R. Appl. Phys. Lett. 111, 111601 (2017).
Yin, Z. et al. Sci. Adv. 4, eaau0480 (2018).
Sasama, Y. et al. Nat. Electron. https://doi.org/10.1038/s41928-021-00689-4 (2021).
Sasama, Y. et al. J. Appl. Phys. 127, 185707 (2020).
Sasama, Y. et al. APL Mater. 6, 111105 (2018).
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
Competing interests
The author declares no competing interests.
Rights and permissions
About this article
Cite this article
Tordjman, M. Diamond electronics with high carrier mobilities. Nat Electron 5, 21ā22 (2022). https://doi.org/10.1038/s41928-021-00707-5
Published:
Issue Date:
DOI: https://doi.org/10.1038/s41928-021-00707-5