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Atomically thin indium oxide transistors

Nature Electronics volume 5, pages 129–130 (2022)Cite this article

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Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

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Fig. 1: Scaled In2O3 transistors.

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Authors and Affiliations

  1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul, South Korea

    Seong Keun Kim

  2. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, South Korea

    Seong Keun Kim

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  1. Seong Keun Kim
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Correspondence to Seong Keun Kim.

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The author declares no competing interests.

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Kim, S.K. Atomically thin indium oxide transistors. Nat Electron 5, 129–130 (2022). https://doi.org/10.1038/s41928-022-00734-w

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