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A pair of rows of field-effect transistors fabricated perpendicular to the growth direction on an aligned carbon nanotube array can create twinned physically unclonable functions for use in secure communication.
Colloidal quantum dot photodetectors can be integrated with complementary metal–oxide–semiconductor readout integrated circuits, resulting in low-cost, high-resolution infrared imagers.
By using optoelectronic device arrays for chip-to-chip communication and neuromorphic cores based on memristor crossbar arrays for highly parallel data processing, reconfigurable and stackable hetero-integrated chips can be created for use in edge computing applications.
Lattice distortions induced by ripples in two-dimensional molybdenum disulfide can reduce electron–phonon scattering, leading to improved charge carrier mobility and enhanced transistor performance.
The electro-acoustic effect can be used to electrically control the phase velocity of travelling acoustic waves in a lithium niobate waveguide, and to construct devices that can modulate the phase, frequency and amplitude of acoustic waves, even at the limit of single phonons.
Sparsification techniques can be used to create Ising machines prototyped on field-programmable gate arrays that can quickly and efficiently solve combinatorial optimization problems.
The stability of graphene-based field-effect transistors with amorphous aluminium oxide serving as the top-gate oxide can be improved by tuning the Fermilevel of the two-dimensional channel material such that it maximizes the energy distance between the charge carriers in the channel and the defect bands in the gate oxide.
Non-volatile analogue switches made from molybdenum disulfide can operate at frequencies of 480 GHz and achieve data transmission rates of 100 Gbit s–1, making them of potential use in sixth-generation communication technology.
A variety of metal electrodes can be deposited on a graphene substrate, delaminated and transferred onto two-dimensional semiconductors to form high-quality metal–semiconductor interfaces.
A sensing surface fabricated from printed thin-film pyroelectric sensors and printed organic thin-film transistor technology can be used for human proximity detection.
A lightweight, flexible technology that displays vibro-tactile patterns across large areas of the skin in single units or through a wirelessly coordinated collection of them can be used to convey map directions for road navigation, translate musical tracks into tactile patterns and reconstruct tactile sensations for feedback control of robotic prosthetics.
The collinear antiferromagnet ruthenium dioxide (RuO2) can generate an electric-field-induced spin current with a well-defined tilted spin orientation that is approximately parallel to the Néel vector.
Floquet topological electromagnetic circuits based on quasi-electrostatic helicoidally rotating elements can be used to create chip-scale antenna interfaces for 5G phased-array applications and wideband impulse radar beamforming.
Copper can be conformally coated over entire electrical circuits and systems for thermal dissipation using an intermediate polymer coating that provides electrical isolation.
Photodetectors that offer broadband imaging from ultraviolet to mid-infrared can be created by using a silicon depletion well for charge integration, single-layer graphene for non-destructive direct readout and multilayer graphene for infrared photocharge injection.
A coupled ring-oscillator-based integrated circuit with 1,968 nodes can be used to efficiently solve combinatorial optimization problems with an accuracy of up to 95%.
A palladium diselenide/molybdenum ditelluride van der Waals photovoltaic heterostructure can provide simultaneous broadband image sensing and convolutional processing.
Few-nanometre-thick flakes of trigonal and monoclinic Cr5Te8 can be grown using chemical vapour deposition, with the monoclinic phase exhibiting an anomalous Hall conductivity of 650 Ω–1 cm–1 and anomalous Hall angle of 5%.
High-performance n-type molybdenum disulfide and p-type tungsten diselenide field-effect transistors can be fabricated using single-crystal strontium titanate dielectrics that are transferred onto two-dimensional semiconductors with the help of van der Waals forces.
High-quality van der Waals contacts between metals and two-dimensional semiconductors can be created using a selenium buffer layer that is deposited before the metal deposition process.