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A hydrogel composite that consists of micrometre-sized silver flakes suspended in a polyacrylamide–alginate hydrogel matrix exhibits a high electrical conductivity of over 350 S cm−1 and a low Young’s modulus of less than 10 kPa.
Artificial corrugations in bilayer graphene can produce a nonlinear anomalous Hall effect that originates from the Berry curvature dipole and a linear Hall effect that originates from a warped Rashba-like valley–orbit coupled band dispersion.
Changes in the anomalous Hall resistance of a single device comprising a Ta/CoFeB/MgO heterostructure can be used to probe three-dimensional magnetic fields with high sensitivity and good linearity.
Dynamic ionic gradients of counterions in films of metal nanoparticles functionalized with charged organic ligands can be used to create transistors that are capable of a 400-fold modulation of the electrical conductivity and can be used to construct logic gates and half-adder circuits.
InGaAs/GaAsSb tunnelling field-effect transistors and InGaAs metal–oxide–semiconductor field-effect transistors can be integrated on the same silicon substrate using conventional CMOS-compatible processes, creating a platform for potential use in low-power logic systems.
Insertion of an atomically thin interlayer, such as graphene, between a metal thin film and a substrate can be used to create flexible electrodes with electrical performance that changes only gradually with strain and is resistant to abrupt mechanical failure.
An all-elastomer strain engineering approach, which uses patterned elastomer layers with tunable stiffnesses, can be used to create intrinsically stretchable transistor arrays with a device density of 340 transistors cm–2 and strain insensitivity of less than 5% performance variation when stretched to 100% strain.
A platform based on complementary metal–oxide–semiconductor (CMOS) technology operating with qubits close to 100 mK can generate static and dynamic signals for the control of many qubits.
By using a conformable electrical interface as an electrical modulating unit and a Venus flytrap as an actuating unit, a biohybrid actuator can be created that is power efficient and responsive, and it can be wirelessly controlled via a smartphone.
The non-ideal characteristics of resistive memory devices can be used to develop low-power and resilient probabilistic neuromorphic computing hardware, suitable for highly constrained edge-based applications.
A networked system of eight computing chips, each with its own on-chip memory, can be used to efficiently implement a range of neural network models and sizes.
A surface electromyography biosensing system that is based on a screen-printed, conformal electrode array and has in-sensor adaptive learning capabilities can classify human gestures in real time and with high accuracy.
Few-layer molybdenum ditelluride and tungsten diselenide field-effect transistors can be reversibly doped with different carrier types and concentrations using pulses of ultraviolet and visible light, allowing reconfigurable complementary metal–oxide–semiconductor circuits to be created.
The integration of active electronic systems and meta-elements using commercial silicon fabrication techniques can be used to create scalable and dynamically programmable terahertz metasurfaces.
Commercial complementary metal–oxide–semiconductor and resistive random-access memory technologies can be used to create multibit compute-in-memory circuits capable of fast and energy-efficient inference for use in small artificial intelligence edge devices.
Transistors that use two-dimensional black phosphorus as the active material can dynamically switch between p-type and n-type operation, and can be used to create security primitive circuits with polymorphic NAND/NOR obfuscation functionality.
A spin–orbit ferromagnetic single layer of (Ga,Mn)As can have a magnetization switching current density as low as 4.6 × 104 A cm−2 by suppressing the field-like torque via control of the current direction and film thickness.
Electrical and short optical pulses can be used to deterministically induce and reverse a nano-fragmented domain state in antiferromagnetic CuMnAs, in a process that can be probed via changes in the resistance of the system.
The magnetization and exchange bias field in an IrMn/CoFeB bilayer can be independently switched using a current-controlled spin–orbit torque generated in the antiferromagnetic IrMn layer.
Carbon-related point defects can be isolated in a commercial silicon-on-insulator wafer, acting as artificial atoms that provide efficient polarized single-photon emission at wavelengths suitable for long-distance propagation in optical fibres.