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This Review provides a full-spectrum classification of computing-in-memory technologies by identifying the degree of memory cells participating in the computation as inputs and/or output, creating a platform for comparing the advantages and disadvantages of each of the different technologies.
An effective-gate-voltage-programmed graded-doping method can be used to reconfigure a single-gate molybdenum ditelluride device to different states, including a polarity-switchable diode, memory, Boolean logic and artificial synapse.
A model that predicts the force behaviour for solid/liquid-dielectric multilayer stacks independent of actuator design, and solely based on the material properties, can be used to develop actuators that provide a steady force output under constant-voltage operation.
Five-stage ring oscillators that operate at frequencies of up to 2.65 GHz can be created using monolayer molybdenum disulfide field-effect transistors developed with a design-technology co-optimization process.
A ternary metallic alloy VS2xSe2(1–x) that has a tunable work function can be grown using chemical vapour deposition and used as contacts for two-dimensional semiconductors.
Computing hardware that can find the ground states of the Ising model could provide a powerful route to solving difficult combinatorial optimization problems.
Switching-current-based low-power transmitters with a high throughput can be created using an approach in which silicon-photonics-based Mach–Zehnder modulators and complementary metal–oxide–semiconductor electrical drivers are co-designed.
Industry compatible solid-state doping of regions between the channel and contacts in carbon nanotube transistors can be used to control device polarity and improve device performance.
An adhesive bioelectronic patch that can conform to irregular curvilinear surfaces can be used in vivo to stimulate the heart and record electrocardiograms of freely moving rats.
External-magnetic-field-free switching of the perpendicular magnetic anisotropy in magnetic layers is a prerequisite for the wide adoption of spintronic devices. This challenge could be met by the Weyl semimetal TaIrTe4, which is now shown to generate an out-of-plane polarized spin current at room temperature.
A network of coupled electronic oscillators can be engineered to find ground states of Ising Hamiltonians and solve various combinatorial optimization problems.
Dual-gated van der Waals heterojunction transistors can provide Gaussian, sigmoid and mixed-kernel functions for use in low-power machine learning classification operations.
Out-of-plane polarized spin current generated by the Weyl semimetal tantalum iridium telluride can be used to achieve the field-free switching of the perpendicular magnetic anisotropy ferromagnet cobalt iron boron at room temperature.