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A non-volatile compute-in-memory macro that is based on spin-transfer torque magnetic random-access memory can offer secure access control, data protection, rapid response times and high energy efficiency for dot-product edge computing.
The capabilities of touchless user interfaces that recognize hand gestures are improving, but their place in the future of everyday electronics remains uncertain.
A technique based on a scanning tunnelling microscope can provide simultaneous control, visualization and spectroscopic characterization of quantum states with atomic resolution.
A scanning tunnelling microscope, operating on an insulating substrate, can be used to perform spatially resolved wavefunction spectroscopy and local gate control of a quantum dot device consisting of phosphorus atoms in silicon.
Strontium titanate two-dimensional electron gas channels that have a thin hafnium oxide barrier layer between the channel and an ionic liquid gate can have ballistic constrictions and clean normal-state conductance quantization.
A magnetic random-access memory device that has an antiferromagnetic material as its storage element can be electrically read using ferromagnetic tunnelling.
Stacking a bilayer of chromium triiodide, a layered antiferromagnet, onto another with a twist angle gives rise to a moiré magnet with rich magnetic phases, including ferromagnetic and antiferromagnetic orders. The magnetic orders can be controlled through the twist angle, temperature and electrical gating, with the system also showing voltage-assisted magnetic switching.
The magnetic state of twisted double bilayers of antiferromagnetic chromium triiodide can be controlled by electrical gating, twist angle and temperature.
Antiferromagnetism of the IrMn layer in Pt/IrMn/CoFeB/MgO/CoFeB three-terminal magnetic tunnel junctions can be electrically detected using tunnelling magnetoresistance and controlled by a spin–orbit torque generated by a 0.8 ns current pulse applied across the heavy-metal platinum layer.
Arrays of thin-film transistors can be fabricated on the 5-inch wafer scale using solution-based processing of molybdenum disulfide and sodium-embedded alumina inks for the semiconductor and gate dielectric, respectively, yielding devices with room-temperature mobilities of up to 80 cm2 V−1 s−1.
The negative differential capacitance (NDC) of ferroelectrics could be used to reduce the energy consumption of ultra-scaled logic devices. An NDC phenomenon in ultrathin ferroelectric zirconium-doped hafnia is demonstrated. Field-effect transistors incorporating this ferroelectric in the gate stack display enhanced on-currents and reduced off-currents compared with conventional analogues, as well as tunable and enduring NDC.