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Current-controlled antiferromagnetic memory

Nature Electronics volume 6, pages 407–408 (2023)Cite this article

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A magnetic random-access memory device that has an antiferromagnetic material as its storage element can be electrically read using ferromagnetic tunnelling.

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Fig. 1: Simplified structure of a current-controlled antiferromagnetic memory cell.

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Author information

Authors and Affiliations

  1. Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, USA

    Pedram Khalili Amiri

  2. Department of Engineering, University of Messina, Messina, Italy

    Francesca Garesci

  3. Department of Mathematical and Computer Sciences, Physical Sciences and Earth Sciences, University of Messina, Messina, Italy

    Giovanni Finocchio

Authors
  1. Pedram Khalili Amiri
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  2. Francesca Garesci
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  3. Giovanni Finocchio
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Corresponding authors

Correspondence to Pedram Khalili Amiri, Francesca Garesci or Giovanni Finocchio.

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The authors declare no competing interests.

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Khalili Amiri, P., Garesci, F. & Finocchio, G. Current-controlled antiferromagnetic memory. Nat Electron 6, 407–408 (2023). https://doi.org/10.1038/s41928-023-00982-4

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