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By isolating one-dimensional tellurium nanowires in boron nitride nanotubes, the electronic properties of the atomic chains can be measured and the structures used to create field-effect transistors.
A black phosphorus/Al2O3/black phosphorus heterostructure can be used to create a tunnel field-effect transistor in which the tunnelling current is in the transverse direction with respect to the drive current, leading to abrupt switching and a negative differential resistance with a peak-to-valley ratio of more than 100 at room temperature.
A liquid metal printing technique can be used to create monolayer and bilayer indium tin oxide, with the bilayer samples offering a transparency above 99.3% and a sheet resistance as low as 5.4 kΩ □−1.
Pressure sensors with a sensitivity of ~103−107 kPa−1, as well as rapid response speeds, low power consumption and excellent stability, can be created by integrating a conductive microstructured air-gap gate with two-dimensional semiconductor transistors.
An analysis of skyrmion dynamics at different temperatures and electric drive currents is used to develop a complete description of the skyrmion Hall angle in ferromagnetic multilayers from the creep to the flow regime and illustrates that skyrmion trajectories can be engineered for device applications.
By using a scanning probe to control the polarization of ferroelectric polymers deposited on the surface of two-dimensional transition metal dichalcogenides, optoelectronic and unconventional memory devices can be created based on lateral p–n junctions.
An electron beam technique can be used to write high-resolution doping patterns in graphene and MoS2 van der Waals heterostructures, and could allow doped circuit designs to be created.
A conformable imager with a resolution of 508 pixels per inch, a speed of 41 frames per second and a total thickness of only 15 μm can be used to capture images of fingerprints and veins, and to map pulse waves.
Time-resolved measurements show that current-induced magnetization switching in ferrimagnetic devices is faster and more energy-efficient than in ferromagnet devices.
Commercial touchscreens can serve as a reader interface for capacitive coupled data transfer using identification tags that are fabricated with thin-film transistor technology and powered by thin-film photovoltaic cells that convert light from the touchscreens.
Thin-film transistors with a high electron mobility and operational stability can be fabricated from solution-processed multilayer channels composed of ultrathin layers of indium oxide, zinc oxide nanoparticles, ozone-treated polystyrene and compact zinc oxide.
A ferroelectric semiconductor field-effect transistor, which uses the two-dimensional ferroelectric semiconductor α-In2Se3 as a channel material, could offer enhanced capabilities compared with conventional ferroelectric field-effect transistors in non-volatile memory applications.
A floating-gate memristive device fabricated in a commercial 180 nm CMOS process can be integrated into a selector-free memristive array and used to demonstrate basic neuromorphic applications.
Using a monolayer molecular crystal as a seeding layer, hafnium oxide dielectrics with an equivalent oxide thickness of only 1 nm can be deposited on graphene, molybdenum disulfide and tungsten diselenide.
A compact ternary content-addressable memory cell, which is based on two ferroelectric field-effect transistors, can provide memory augmented neural networks with improved energy and latency performance compared with traditional approaches based on graphics processing units.
High-voltage amorphous oxide semiconductor thin-film transistors can be integrated on top of a silicon integrated circuit containing 100-nm-node fin field-effect transistors using an in-air solution process.
The absorption profile of photodetectors based on silicon can be extended into the near- and shortwave-infrared regions by taking advantage of optical resonance effects.
Flexible transparent electrodes made from silver nanowires that form grid-like structures due to ionic electrostatic charge repulsion can be used to create flexible single-junction and tandem organic photovoltaic devices with power conversion efficiencies of 13.1% and 16.5%, respectively.