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Carbon nanotube transistors with high performance and integration density can be created using a full-contact structure to scale the nanotube–electrode contact length.

This Perspective explores the potential of directly mapping computational problems in machine learning to materials and device properties, and proposes metrics to facilitate comparisons between different solutions to machine learning tasks.

Substantial improvements in computing energy efficiency, by up to ten orders of magnitude, will be required to solve major computing problems — such as planetary-scale weather modelling, real-time, brain-scale modelling and human evolutionary simulation — by the end of this century.

A wearable sweat sensor powered by a flexible solar cell can continuously collect multimodal physicochemical data—glucose, pH, sodium ion, sweat rate and skin temperature—across indoor and outdoor physical activities for over 12 h.

Aligned carbon nanotubes can be used to create six-transistor static random-access memory cells with an area of less than 1 μm² and performance superior to cells made using 90-nm-node silicon transistors, as well as field-effect transistors with scaled contacted gate pitch comparable with the 10 nm silicon technology node.

This Review examines switching mechanisms in memristive devices based on van der Waals materials, and explores the advantages such devices offer and the challenges that must be faced for them to be of use in next-generation electronic and computing applications.

The use of topological spin structures is restricted by their limited scale, thermal stability or magnetic field requirements. A high-magnetic-field-assisted growth approach overcomes these limitations, enabling the construction of millimetre-scale meron lattices. These lattices were used to demonstrate chirality transfer from topologically protected quasiparticles to electrons and then photons.

Physically unclonable functions that are based on magnetic random-access memory, and integrated with complementary metal–oxide–semiconductor circuitry, can be used to create secure and efficient compute-in-memory macros for edge computing.

Metadevices that are based on quasi-one-dimensional surface plasmon polariton structures can offer optical and radiofrequency transparency, and can be used to create a wireless communication scheme for image transfer.

Millimetre-scale meron lattices that are stable at room temperature and under zero magnetic field can be used as spin injectors in light-emitting diodes, providing 22.5% circularly polarized electroluminescence.

A non-volatile compute-in-memory macro that is based on spin-transfer torque magnetic random-access memory can offer secure access control, data protection, rapid response times and high energy efficiency for dot-product edge computing.

The capabilities of touchless user interfaces that recognize hand gestures are improving, but their place in the future of everyday electronics remains uncertain.

A technique based on a scanning tunnelling microscope can provide simultaneous control, visualization and spectroscopic characterization of quantum states with atomic resolution.

A scanning tunnelling microscope, operating on an insulating substrate, can be used to perform spatially resolved wavefunction spectroscopy and local gate control of a quantum dot device consisting of phosphorus atoms in silicon.

Strontium titanate two-dimensional electron gas channels that have a thin hafnium oxide barrier layer between the channel and an ionic liquid gate can have ballistic constrictions and clean normal-state conductance quantization.

A magnetic random-access memory device that has an antiferromagnetic material as its storage element can be electrically read using ferromagnetic tunnelling.

Stacking a bilayer of chromium triiodide, a layered antiferromagnet, onto another with a twist angle gives rise to a moiré magnet with rich magnetic phases, including ferromagnetic and antiferromagnetic orders. The magnetic orders can be controlled through the twist angle, temperature and electrical gating, with the system also showing voltage-assisted magnetic switching.