Proximity-induced superconductivity in (Bi1−xSbx)2Te3 topological-insulator nanowires

  • Mengmeng Bai
  • Xian-Kui Wei
  • Yoichi Ando


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  • Developing scalable strategies of miniaturization and integration is key for achieving high-density integrated circuit devices. Here, the authors propose a silicon-based one-transistor device with a 40% reduction in circuit footprint, which combines the functionalities of logic gates, memory, and artificial synapses for mass production.

    • Mingzhi Dai
    • Zhitang Song
    • Junhao Chu
    Article Open Access
  • Nanoscale light manipulation and characterization are essential in nano-optics, but conventional microscopy or indirect imaging methods are often limited by low resolution or invasive nature. Here, a non-destructive light-field imaging with ~20 nm resolution is realized by p-n junction photodetection in graphene controlled by gate voltage.

    • Tongcheng Yu
    • Francisco Rodriguez
    • Alexander N. Grigorenko
    Article Open Access
  • Understanding grain morphology and kinetics of solid-phase crystallization is important for controlling the functional properties of polycrystalline materials. Here, in situ coherent X-ray diffraction imaging and transmission electron microscopy elucidate quantitatively the kinetics of a single-grain growth in Zr-doped In2O3 films.

    • Dmitry Dzhigaev
    • Yury Smirnov
    • Michael Elias Stuckelberger
    Article Open Access
  • Visualizing the composition of grain networks is key for understanding the structure evolution and functional properties of composite materials. Here, X-ray fluorescence tomography, coupled with an absorption correction algorithm, reveals mechanistic insights in the phase transformations and transport properties of a mixed ionic-electronic conductor.

    • Mingyuan Ge
    • Xiaojing Huang
    • Yong S. Chu
    Article Open Access