Featured
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Letter |
Complementary resistive switches for passive nanocrossbar memories
Resistive nanowire arrays are intensively pursued as easy-to-fabricate memory technology, where data can be written and read through simple voltage–current operations. However, problems encountered in achieving stable switching independent of external influences has hampered their progress. The complementary, antiserial arrangement of two memory elements is now shown to lead to the desired stability.
- Eike Linn
- , Roland Rosezin
- & Rainer Waser
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Article |
Isotope effect in spin response of π-conjugated polymer films and devices
The origin of the effect that a magnetic field has on various electronic properties of organic semiconductors is still controversial. It is now shown that substituting hydrogen for deuterium in conducting polymers changes the response to a magnetic field substantially, proving the essential part played by hyperfine interaction in this effect.
- Tho D. Nguyen
- , Golda Hukic-Markosian
- & Z. Valy Vardeny
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Letter |
Chemically fixed p–n heterojunctions for polymer electronics by means of covalent B–F bond formation
Creating p–n junctions using semiconducting polymers has proved to be challenging because of difficulties in depositing semiconducting polymer films. Now, by using a cationic conjugated-polymer electrolyte and a neutral conjugated-polymer layer, devices with a fixed bilayer organic p–n junction and fast response times have been fabricated.
- Corey V. Hoven
- , Huiping Wang
- & Guillermo C. Bazan