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An organic artificial spiking neuron based on nonlinear ionoelectronic phenomena is reported that is sensitive to ionic and biomolecular species common in neuronal signalling. The neuron realistically emulates the function and firing properties of biological neurons and enables biohybrid interfaces made of artificial and biological components that function in real time.
A monocrystalline native oxide dielectric, β-Bi2SeO5, with a high dielectric constant has been synthesized by oxidizing a two-dimensional (2D) semiconductor, Bi2O2Se. In 2D transistors, the ultrathin β-Bi2SeO5 dielectric demonstrates sub-0.5-nm equivalent oxide thickness and leakage current below the low-power limit, meeting the requirements of the International Roadmap for Devices and Systems.
The interactions between antiferromagnetic moments and spin currents owing to topological surface states are observed as a combination of magnetoresistance effects and current-induced switching of the magnetic moments. These observations suggest that topological surface states could provide a tool for reading and writing antiferromagnetic memories with ultralow energy consumption.
An artificial neuron is designed to communicate chemically with biological neurons. The artificial neuron can receive and release the neurotransmitter dopamine, enabling adaptive interaction with live neurons and the sciatic nerve in a mouse leg.
Laser-assisted chemical reactions have been used to write reversible ultra-high-density doping patterns in graphene for optoelectronic applications. The approach used two laser beams with specific photon energies and geometric configurations to enable local doping with a high dopant coverage ratio on graphene, while preserving the electronic properties of the surface.
Microelectromechanical systems that can disintegrate and degrade after a targeted lifetime are demonstrated alongside bioresorbable encapsulating materials and deployment strategies that offer safe biointegration of such devices. These devices have the potential to reduce electronic waste and help create temporary biomedical implants.
Transistors based on two-dimensional semiconductors suffer from electrical instabilities because charges readily get trapped in the gate oxides. As charge trapping is sensitive to the energetic alignment of the channel Fermi level to the defect bands in the oxide, the number of electrically active traps can be reduced by tuning the channel Fermi level.
A solid-state electronic switch based on an atomic sheet of molybdenum disulfide is demonstrated in the 6G communication band with very high speed data transmission.
Measurements reveal that the antiferromagnet ruthenium dioxide (RuO2) can generate an electric-field-induced spin current with a component of spin polarization perpendicular to the sample plane. This verifies theoretical predictions and provides a strategy for the future development of highly energy-efficient magnetic storage devices.
A silicon chip fabricated in a standard semiconductor foundry demonstrates that coupled ring oscillators can solve optimization problems targeted by quantum computers, and are quicker, cheaper and more energy-efficient than digital solvers. The 1,968 oscillator integrated circuit consumes 0.042 W and finds a solution within 50 oscillation cycles.
Quantum computing has attracted attention owing to its potential to solve problems that are intractable with traditional computing technologies; however, a scalable scheme for producing millions of qubits remains elusive. A new effort demonstrates a milestone to achieving this by fabricating qubits in the same factory where state-of-the-art semiconductor chips are manufactured.
