The interactions between antiferromagnetic moments and spin currents owing to topological surface states are observed as a combination of magnetoresistance effects and current-induced switching of the magnetic moments. These observations suggest that topological surface states could provide a tool for reading and writing antiferromagnetic memories with ultralow energy consumption.
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References
Šmejkal, L., Mokrousov, Y., Yan, B. & MacDonald, A. H. Topological antiferromagnetic spintronics. Nat. Phys. 14, 242–251 (2018). A review of topological AFM spintronics.
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This is a summary of: Chen, X. et al. Control of spin current and antiferromagnetic moments via topological surface state. Nat. Electron. https://doi.org/10.1038/s41928-022-00825-8 (2022).
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Controlling antiferromagnetic moments with spin currents has low power requirements. Nat Electron 5, 549–550 (2022). https://doi.org/10.1038/s41928-022-00826-7
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DOI: https://doi.org/10.1038/s41928-022-00826-7