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High-quality van der Waals contacts between metals and two-dimensional semiconductors can be created using a selenium buffer layer that is deposited before the metal deposition process.
By exploiting all three polarizations of a spin current in a ferromagnet/non-magnet/ferromagnet trilayer system, field-free spin–orbit torque switching is possible at low switching currents.
High-frequency elastic waves can propagate across local disorder and around sharp corners in nanoelectromechanical aluminium nitride membranes; this behaviour can be directly imaged using microwave microscopy.
Fin-shaped transistors can host hole spin qubits at high enough temperatures to potentially enable the scaling and development of quantum computing systems controlled by conventional electronics co-integrated in the same package.
Multiple, small computational modules can be combined to create field-programmable gate-array-based stochastic neural network accelerators that are able to solve more complex problems than their individually trained parts.
Suppression of superconductivity in metallic nanowires due to a gate voltage can be linked to the relaxation of high-energy electrons and not to the presence of electric fields at the superconductor surface.
High-performance indium oxide transistors with dimensions smaller than advanced silicon technologies can be fabricated using an industry-compatible atomic layer deposition process.
Using a multi-layer metasurface array in which each meta-atom of the metasurface acts as an active artificial neuron, a programmable diffractive deep neural network can be created that directly processes electromagnetic waves in free space for wave sensing and wireless communications.
By optimizing the doping and crystallization behaviour of solution-processed metal halide perovskite thin films, p-channel transistors with mobilities of 50 cm2 V–1 s–1 and on/off ratios of 108 can be fabricated.
Neuromorphic hardware designed to implement spiking neural networks for deep learning and artificial intelligence applications can also be used to solve non-cognitive computational tasks such as Monte Carlo methods.
Charge trapping mechanisms in molybdenum-disulfide-based transistors can be used to mimic the adaptive behaviour of human eyes, allowing vision sensors to be created with high dynamic range.
Solid-state tandem structures that use protons as the diffusing species can be used to create electrochromic devices that exhibit high contrast ratios, fast responses, good colouration efficiency and excellent cycling stability.
An integrated circuit fabricated using industry-standard 40 nm complementary metal–oxide–semiconductor technology can combine silicon quantum devices, digital addressing and analogue multiplexed dispersive readout electronics.
Sulfur vacancies in monolayer molybdenum disulfide can be passivated using an oxygen-incorporated chemical vapour deposition technique, which results in less n-type doping, enhanced photoluminescence and decreased contact resistance compared with growth without oxygen.
Wide-bandgap transistors with room-temperature hole mobility of 680 cm2 V−1 s−1 can be created without surface doping using hydrogen-terminated diamond/hexagonal boron nitride heterostructures.
Inorganic molecular crystal films of antimony trioxide can be fabricated using thermal evaporation deposition and used as a van der Waals dielectric in molybdenum disulfide field-effect transistors.
A vertical transistor and resistive memory can be integrated on a single vertical III–V semiconductor nanowire on silicon, creating a compact cell capable of Boolean logic operations.
Measurements of inkjet-printed thin-film devices made from titanium carbide MXene (metal), molybdenum disulfide (semiconductor) and few-layer graphene (semimetal) clarify the charge transport mechanisms of the devices and highlight the role of inter-flake and intra-flake processes.