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By combining a CMOS-based integrated circuit with flexible and collapsible radiating structures, a scalable phased array architecture can be fabricated that has an areal mass density of only 0.1 g cm−2.
Bilayer WSe2 field-effect transistors with near ideal device characteristics can be created using transferred via contacts made from metal-embedded hexagonal boron nitride.
A tunnel field-effect transistor with spin-dependent outputs that are voltage controllable and reversible can be created using a dual-gated graphene/CrI3/graphene tunnel junction.
Electronic components made from two-dimensional MoTe2 can be chemically synthesized and integrated in a single step, creating devices in which each component in the active layer is connected via covalent bonds.
Pulse engineering techniques can be used to reduce the average Clifford gate error rates for silicon quantum dot spin qubits down to 0.043%, a factor of three improvement over state-of-the-art silicon devices.
Measurements with a lateral spin pumping device architecture suggest that long spin diffusion lengths of more than 1 μm are possible in conjugated polymer systems that have a sufficiently high spin density.
By integrating two-dimensional MoS2 transistors with metal-oxide resistive random-access memories, two-transistor–two-resistor ternary content-addressable memory cells can be created, which could be used to search large amounts of data in parallel.
A reinforcement learning algorithm can be implemented on a hybrid analogue–digital platform based on memristive arrays for parallel and energy-efficient in situ training.
A transparent electronic skin, composed of an elastomer and an ionic liquid, can autonomously self-heal in both dry and wet conditions due to ion–dipole interactions.
Amorphous silicon compositions, which are doped with oxygen or nitrogen and sandwiched between metal electrodes, can be used to create purely electronic memristors with switching capabilities that are fast, uniform, durable, multi-state and low power.
A lateral heterojunction with diode-like electrical transport can be created in a homogeneous MoS2 monolayer by using a substrate in which one segment is made from an amorphous fluoropolymer and another segment from hexagonal boron nitride.
Thermal scanning probe lithography can be used to pattern metal electrodes in direct contact with monolayer MoS2, creating field-effect transistors that exhibit vanishing Schottky barrier heights, high on/off ratios of 1010, no hysteresis, and subthreshold swings as low as 64 mV per decade.
Nonlinear buckling processes can be used to transform thin films of piezoelectric polymers into sophisticated 3D piezoelectric microsystems with applications in energy harvesting, multifunctional sensing and bio-integrated devices.
Perfect orthogonality can be imposed on wireless communication channels by using reconfigurable metasurfaces to tune the disorder of their propagation environment.
An optoelectronic platform that operates at low power and uses position- and angle-independent wireless power harvesting can provide multimodal programmable control over optogenetic stimulation parameters.
Rudimentary circuit elements, including a binary wire and an OR gate, can be created through the patterning of dangling bonds on a hydrogen-terminated silicon surface.
Three-dimensional integrated circuits based on slot antennas and carbon nanotubes can combine plasmonics and electronics, and can be used to create unidirectional receivers and wavelength- and polarization-division multiplexing.
The interplay between spin–orbit and spin-transfer torques can be used to develop a low-power route to magnetization switching of perpendicular magnetic tunnel junctions without an external magnetic field.
A pH sensor made from a flexible charge-coupled device, and integrated with a temperature sensor, can be used to monitor the sweat pH and skin temperature of a person in real time.