Chalcogenides fill the gap - p1073

doi:10.1038/nmat4163

Two-dimensional semiconductors such as transition metal dichalcogenides can complement graphene in applications where a sizeable natural energy bandgap is required. Recent studies aim at bringing these materials to a higher level of maturity.

Full text - Chalcogenides fill the gap | PDF (645 KB) - Chalcogenides fill the gap

Heterojunctions in 2D semiconductors: A perfect match - pp1075–1076

Georg S. Duesberg

doi:10.1038/nmat4127

Three independent groups report the growth of two-dimensional heteromaterials with seamless vertical or lateral interfaces. The one-layer-thick transition-metal dichalcogenides thus form heterojunctions with built-in device function.

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See also: Letter by Huang et al. | Article by Gong et al.

2D crystal semiconductors: Intimate contacts - pp1076–1078

Debdeep Jena, Kaustav Banerjee & Grace Huili Xing

doi:10.1038/nmat4121

High electrical contact resistance had stalled the promised performance of two-dimensional layered devices. Low-resistance metal–semiconductor contacts are now obtained by interfacing semiconducting MoS₂ layers with the metallic phase of this material.

Full text - 2D crystal semiconductors: Intimate contacts | PDF (916 KB) - 2D crystal semiconductors: Intimate contacts

See also: Article by Kappera et al.

Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor - pp1091–1095

Miguel M. Ugeda, Aaron J. Bradley, Su-Fei Shi, Felipe H. da Jornada, Yi Zhang, Diana Y. Qiu, Wei Ruan, Sung-Kwan Mo, Zahid Hussain, Zhi-Xun Shen, Feng Wang, Steven G. Louie & Michael F. Crommie

doi:10.1038/nmat4061

Transition metal dichalcogenides are attracting widespread attention for their appealing optoelectronic properties. Using a combination of numerical and experimental techniques, the exciton binding energy is now determined for MoSe₂ on graphene.

Full text - Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor | PDF (1,638 KB) - Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor

Lateral heterojunctions within monolayer MoSe₂–WSe₂ semiconductors - pp1096–1101

Chunming Huang, Sanfeng Wu, Ana M. Sanchez, Jonathan J. P. Peters, Richard Beanland, Jason S. Ross, Pasqual Rivera, Wang Yao, David H. Cobden & Xiaodong Xu

doi:10.1038/nmat4064

Physical vapour transport is now used to grow single-atomic-layer lateral MoSe₂/WSe₂ heterojunctions, enabling the development of in-plane architectures for optoelectronic applications based on these semiconducting materials.

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See also: News and Views by Duesberg

Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors - pp1128–1134

Rajesh Kappera, Damien Voiry, Sibel Ebru Yalcin, Brittany Branch, Gautam Gupta, Aditya D. Mohite & Manish Chhowalla

doi:10.1038/nmat4080

Non-optimal electrical contacts can significantly limit the performance of MoS₂-based thin-film transistors. Transformation of semiconducting MoS₂ into its metallic phase is now shown as a viable strategy to decrease the metal–MoS₂ contact resistance.

Full text - Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors | PDF (1,236 KB) - Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors

See also: News and Views by Jena et al.

Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers - pp1135–1142

Yongji Gong, Junhao Lin, Xingli Wang, Gang Shi, Sidong Lei, Zhong Lin, Xiaolong Zou, Gonglan Ye, Robert Vajtai, Boris I. Yakobson, Humberto Terrones, Mauricio Terrones, Beng Kang Tay, Jun Lou, Sokrates T. Pantelides, Zheng Liu, Wu Zhou & Pulickel M. Ajayan

doi:10.1038/nmat4091

Vapour growth of WS₂/MoS₂ two-dimensional materials at low and high temperature allows the synthesis of in-plane lateral heterojunctions and vertically stacked bilayers, respectively, with atomically sharp interfaces.

Full text - Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers | PDF (3,926 KB) - Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers

See also: News and Views by Duesberg