Two-dimensional (2D) semiconducting transition metal dichalcogenides could be used to build high-performance flexible electronics. However, flexible field-effect transistors (FETs) based on such materials are typically fabricated with channel lengths on the micrometre scale, not benefitting from the short-channel advantages of 2D materials. Here, we report flexible nanoscale FETs based on 2D semiconductors; these are fabricated by transferring chemical-vapour-deposited transition metal dichalcogenides from rigid growth substrates together with nano-patterned metal contacts, using a polyimide film, which becomes the flexible substrate after release. Transistors based on monolayer molybdenum disulfide (MoS2) are created with channel lengths down to 60 nm and on-state currents up to 470 μA μm−1 at a drain–source voltage of 1 V, which is comparable to the performance of flexible graphene and crystalline silicon FETs. Despite the low thermal conductivity of the flexible substrate, we find that heat spreading through the metal gate and contacts is essential to reach such high current densities. We also show that the approach can be used to create flexible FETs based on molybdenum diselenide (MoSe2) and tungsten diselenide (WSe2).
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npj 2D Materials and Applications Open Access 01 August 2022
Nature Communications Open Access 09 December 2021
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A.D. is in part supported by the Swiss National Science Foundation’s Early Postdoc.Mobility fellowship (grant no. P2EZP2_181619) and in part by Beijing Institute of Collaborative Innovation (BICI). R.W.G., C.S.B. and K.S. acknowledge the National Science Foundation (NSF) Graduate Research Fellowship. K.S. also acknowledges support from the Stanford Graduate Fellowship. We thank the Stanford Nanofabrication Facility and Stanford Nano Shared Facilities for enabling device fabrication and characterization, funded under NSF award no. ECCS-1542152. E.P. and S.V. acknowledge support from the Stanford SystemX Alliance.
The authors declare no competing interests.
Peer review information Nature Electronics thanks Henry Medina and the other, anonymous, reviewer(s) for their contribution to the peer review of this work.
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Daus, A., Vaziri, S., Chen, V. et al. High-performance flexible nanoscale transistors based on transition metal dichalcogenides. Nat Electron 4, 495–501 (2021). https://doi.org/10.1038/s41928-021-00598-6
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