Abstract
Novel T centers in silicon hold great promise for quantum networking applications due to their telecom band optical transitions and the long-lived ground state electronic spins. An open challenge for advancing the T center platform is to enhance its weak and slow zero phonon line (ZPL) emission. In this work, by integrating single T centers with a low-loss, small mode-volume silicon photonic crystal cavity, we demonstrate an enhancement of the fluorescence decay rate by a factor of Fâ=â6.89. Efficient photon extraction enables the system to achieve an average ZPL photon outcoupling rate of 73.3 kHz under saturation, which is about two orders of magnitude larger than the previously reported value. The dynamics of the coupled system is well modeled by solving the Lindblad master equation. These results represent a significant step towards building efficient T center spin-photon interfaces for quantum information processing and networking applications.
Similar content being viewed by others
Introduction
Optically interfaced atomic defects in solid-state materials are important building blocks for a variety of quantum technologies1. For example, nitrogen and silicon vacancy centers in diamonds have been used to demonstrate milestone results for fiber-based quantum networks, including spin-photon entanglement2, deterministic entanglement generation between remote spins3, quantum state teleportation4, and memory-enhanced communication5. However, these defects have optical transitions at the visible or near-infrared spectral range resulting in large fiber transmission loss, requiring nonlinear frequency conversion6 to extend the network range. Significant progress has been made towards utilizing atomic defects with telecom optical transitions, leading to the discovery of single vanadium ions in silicon carbide7, defects in gallium nitride8, and single erbium ions in yttrium orthosilicate9, as well as a recent demonstration of indistinguishable telecom photon generation from single erbium ions10.
Early exploration into the scalable fabrication of atomic defects with photonic structures relies on heterogeneous material integration and typically involves pick-and-place type of fabrication procedures9,11,12. On the other hand, silicon-on-insulator (SOI) is a mature and scalable platform to enable large-scale monolithic photonic and electronic device integration. Telecom-interfaced solid-state spins in silicon can thus benefit from the technological advantages of the SOI platform, and be utilized for realizing large-scale spin-based integrated quantum photonic chips13. Moreover, silicon can be isotopically enriched to create a âsemiconductor vacuumâ14 for lowering the magnetic noise generated from the 29Si nuclear spin bath.
Beyond efforts towards optical addressing of erbium ions in silicon15,16,17, multiple novel atomic defect centers in silicon, including C, G, T, and W centers18,19,20,21,22,23,24,25,26,27, have been experimentally identified recently towards quantum information applications. Among them, T centers are particularly promising due to their telecom O-band optical transitions, doublet ground state spin manifold, and long spin coherence times in an enriched 28Si sample23. Single T centers have been isolated in micropuck24 and waveguide28 structures. To further advance the single T center platform for quantum networking applications, challenges remain to enhance its weak and slow coherent emission at the zero phonon line (ZPL). The cavity-induced Purcell effect29 has been widely used for enhancing the fluorescence emission of various atomic defects in solids, including G centers30,31,32.
In this work, we demonstrate Purcell enhancement of a single T center in a low-loss, small mode-volume silicon photonic crystal (PC) cavity. When the cavity is tuned into resonance with the single T center we observe an enhancement of its fluorescence decay rate by a factor of Fâ=â6.89, shortening the single T center lifetime to 136.4âÂąâ0.6 ns. Leveraging the nanophotonic circuit and an angle-polished fiber for light coupling33, the system detection efficiency reaches Ρsysâ=â9.1%, representing the probability of a single photon emitted into the cavity being registered by the detector. This efficiency is 20-fold larger than that achieved in a typical confocal-type measurement system for T centers. We probe single T centers in the device using time-resolved photoluminescence excitation (PLE) spectroscopy. Under the pulsed excitation, the system can detect 0.01 ZPL photon per excitation, reaching an average photon count rate of 73.3âkHz, which is about two orders of magnitude improvement from the previously reported emission rate for single T centers in the waveguide28. By solving the Lindblad master equation, we develop a numerical model to describe the coupling dynamics between the single T center and the cavity, and extract cavity-QED parameters as well as T center pure dephasing rate (Îd) and spectral diffusion (Îsd). This work represents a key step towards utilizing single T centers in silicon for quantum information applications.
Results
Device integration and PLE spectroscopy
Our experimental configuration is outlined in Fig. 1a. The nanophotonic devices are fabricated on a SOI sample which is situated on the cold finger of a closed-cycle cryostat (Tâ=â3.4âK). Each device consists of a subwavelength grating coupler (GC)34 and a one-dimensional PC cavity, which is connected by a linearly tapered waveguide (Fig. 1b). Optical coupling to the PC cavities is accomplished by using an angle-polished fiber via the GC with a one-way coupling efficiency of ΡGCâ=â46.1% at 1326 nm (Fig. 1c). The fiber is mounted on a three-axis translation stage for optimizing the coupling. The PC cavity used in this work (Fig. 1d) has a quality factor Qâ=â4.3âĂâ104. Fluorescence from the T center is detected by a fiber-coupled superconducting nanowire single photon detector (SNSPD) located in a separate cryostat (Fig. 2a). To match the atomic transition, we coarsely red-tune the cavity resonance by condensing nitrogen gas onto the surface of the device; we fine blue-tune the cavity resonance by sending laser pulses with a high optical power into the cavity (Supplementary Section 1.2).
T centers are generated in the middle of the device layer (220ânm in thickness) of the SOI samples using the ion implantation method35. Each SOI sample is implanted sequentially with 1:1 ratio of 35âkeV 12C and 8âkeV 1H ions, with rapid thermal annealing performed in between and after the implantation steps (Supplementary Section 3.1). The two samples shown in this work have an implantation fluence of 5âĂâ1013âcmâ2 (sample A) and 7âĂâ1012âcmâ2 (sample B), respectively, which result in different T center densities after the generation process. To search for T centers, we perform time-resolved PLE spectroscopy by scanning the wavemeter-stabilized laser around the reported inhomogeneous center of T centers in silicon23,24,35, with the pulse sequence shown in Fig. 2b.
First, we measure the spectrum with the cavity far-detuned from the scan range (Fig. 2c). The inhomogeneous distribution linewidth is about Îinhâââ29 GHz. Isolated peaks can be observed away from the inhomogeneous center, which we interpret as the optical transitions of T centers that are likely located inside the taper waveguide. These peaks have an average full-width half maximum (FWHM) linewidth of 2.40âÂąâ0.86âGHz, and a fluorescence lifetime of 836.8âÂąâ57.3âns (Supplementary Section 4), which is slightly shorter than the bulk T centersâ lifetime of 940âns23. The estimated T center densities are ~1âĂâ1012âcmâ3 and ~3âĂâ1011âcmâ3 for sample A and B, respectively (Supplementary Section 3.1). To gauge the probability of an excited T center emitting a photon into the waveguide mode, we analyze a typical waveguide-coupled T center (at 46 GHz in sample B); we use the bounded T center quantum efficiency (discussed below) to estimate its emission efficiency to the waveguide mode as 2.6% ⤠Ρwg ⤠10.9% (Supplementary Section 4).
Next, we scan the laser frequency with the cavity tuned in-range to obtain the cavity-coupled PLE spectrum (Fig. 2d). In sample B, a new T center peak at the inhomogeneous center emerges with its fluorescence significantly surpassing all other peaks. This cavity-coupled T center has a FWHM linewidth of Îâ=â3.81âÂąâ0.07âGHz under a low excitation power (Fig. 3a). To verify the peak originates from a single T center, we measure the second-order autocorrelation function g(2) using all the detected fluorescence photons after each excitation pulse (Fig. 3b). Photon antibunching is observed with the value g(2)(0)â=â0.024âÂąâ0.018, which confirms the majority of the detected photons come from a single emitter. This is the lowest g(2)(0) value ever observed for single T centers, and is comparable or better than other defect-based telecom emitters in solids7,8,9,10,20,27,36. Autocorrelation measurements for the single T center can show bunching (g(2)(n)â>â1, when âŁnâŁââĽâ1) under certain excitation conditions, which we speculate to be caused by spectral diffusion (Supplementary Section 5.3).
The emission amplitude of the cavity-coupled single T center saturates at 0.01 photons per excitation pulse (Fig. 3c). Both the saturation and power-dependent linewidth (Fig. 3d) are well described by the numerical modeling (discussed below). The measured g(2)(0) at higher powers (Fig. 3d) is limited by the accidental coincidences from background T centersâ emission (Supplementary Section 5.2). To characterize the spectral diffusion, we monitor the spectrum of the cavity-coupled single T center over a few hours time span by taking repetitive PLE scans (Fig. 3e), which reveals a spectrum-center distribution of 11.30âÂąâ0.13 GHz. A similar level of spectral diffusion is observed for waveguide-coupled T centers (Supplementary Section 4). We note that this method only provides a lower bound of the Îsd due to the limited experiment repetition rate. We later turn to the numerical modeling to extract Îsd.
We apply a magnetic field (B) up to 300âmT along silicon [100] direction aiming to split the single T center line. We note that we have not been able to observe unambiguous Zeeman splitting using simultaneous two-tone laser sideband excitation, which is likely due to the limited splitting compared with the broad single T center linewidth. When using the single-tone laser excitation, the PLE amplitude decreases at increasing B field due to spin polarization35. We model this behavior (Supplementary Section 5.4) to extract the difference of the excited- and ground-state g-factors âŁÎgâŁâ=â0.55âÂąâ0.04, which matches with one of the two predicted âŁÎg⣠values for T centers under a B field along the silicon [100] direction35.
Purcell enhancement and numerical modeling
Lastly, we study the cavity-QED of the coupled system. When the cavity is tuned into resonance, the single T centerâs fluorescence lifetime is shortened to 136.4âÂąâ0.6 ns (Fig. 4a), which is 6.89âÂąâ0.03 times faster than the bulk lifetime of 1/Î0â=â940âns23. Leveraging this enhanced decay, we extract an average ZPL photon outcoupling rate of 73.3 kHz at saturation for the cavity-coupled single T center. To confirm the enhancement originates from the cavity coupling, we measure the fluorescence decay rate Îcav at different cavity detunings (Îac) (Fig. 4b), which can be described as \({\Gamma }_{{{{{{{{\rm{cav}}}}}}}}}/{\Gamma }_{0}={P}_{t}/[1+{(2{\Delta }_{ac}/\tilde{\kappa })}^{2}]+{\Gamma }_{\infty }/{\Gamma }_{0}\), where Ptâ=â5.88âÂąâ0.04 is the Purcell factor describing the fluorescence decay enhancement due to the cavity, Îââ=â(1.03âÂąâ0.02)Î0âââÎ0 is the asymptotic decay rate at large detunings, and \(\tilde{\kappa }/2\pi=7.11\pm 0.09\) GHz is the characteristic linewidth. To explain the deviation of \(\tilde{\kappa }\) from the cavity linewidth Îş/2Ďâ=â5.22âGHz, we turn to numerical calculations by solving the Lindblad master equation. Beyond the cavity and atomic loss channels, we also incorporate the pure dephasing and spectral diffusion processes (Supplementary Section 6.1). The dynamics of the coupled system can be described by the Jaynes-Cummings Hamiltonian of the form,
which assumes rotating wave approximation in the rotating frame of the laser field (ĎL). Here Îaâ=âĎaâââĎL and Îcâ=âĎcâââĎL are, respectively, the detunings of the laser from the T center transition Ďa and the cavity resonance Ďc; g is the coupling rate between the single T center and the cavity mode, and Ί is the optical Rabi frequency. The global fitting of the experimental data based on the numerical calculations given the known Îş and Î0 (Supplementary Section 6.1), reveals the full cavity-QED parameter set (g,âÎş,âÎ0)â=â2ĎâĂâ(42.4âMHz, 5.22âGHz, 169.3âkHz), an excited-state dephasing rate 2Îdâ=â2ĎâĂâ1.29âGHz, and a spectral diffusion Îsdâ=â2ĎâĂâ1.69âGHz. The characteristic linewidth \(\tilde{\kappa }\) has contributions from the cavity linewidth Îş as well as Îd and Îsd. The model can simultaneously capture the saturation (Fig. 3c), power-dependent linewidth (Fig. 3d), and detuning-dependent fluorescence decay (Fig. 4b) results. Beyond the dephasing and the spectral diffusion, the single T center linewidth also has a minor contribution from the thermal broadening, which we estimate as Îthâ~â0.1âGHz from the temperature-dependent linewidth measurements (Supplementary Section 5.5).
To find out the Purcell enhancement of the single T center ZPL (PZPL) and its quantum efficiency (ΡQE), we express the total emission rate of a single T center in absence of a cavity as the summation of the emission rates into the ZPL and the phonon sideband (PSB), as well as nonradiative relaxation37, Î0â=âÎłZPLâ+âÎłPSBâ+âÎłnr. The Debye-Waller (DW) factor and the quantum efficiency can then be defined as DWâ=âÎłZPL/(ÎłZPLâ+âÎłPSB) and ΡQEâ=â(ÎłZPLâ+âÎłPSB)/Î0, respectively. When the cavity is tuned into resonance with the T center ZPL, the cavity-enhanced decay rate is Îcavâ=â(PZPLâ+â1)ÎłZPLâ+âÎłPSBâ+âÎłnr, where PZPLâ=âPt/(DWΡQE) is the Purcell factor describing the enhancement of the ZPL. We can thus put a lower bound on the PZPLââĽâPt/DWâ=â25.6, using the reported DW of 23%23. For simplicity, we neglect the potential suppression of the ÎłPSB due to the cavity37. The ratio of the single T center ZPL emission coupled to the resonant cavity mode can be estimated as \(\beta={P}_{{{{{{{{\rm{ZPL}}}}}}}}}{\gamma }_{{{{{{{{\rm{ZPL}}}}}}}}}/\left[({P}_{{{{{{{{\rm{ZPL}}}}}}}}}+1){\gamma }_{{{{{{{{\rm{ZPL}}}}}}}}}+{\gamma }_{{{{{{{{\rm{PSB}}}}}}}}}+{\gamma }_{{{{{{{{\rm{nr}}}}}}}}}\right]={P}_{t}/({P}_{t}+1)=85.5\)%. Due to sub-optimal positioning of the single T center inside the cavity and imperfect dipole alignment with the local cavity electrical field polarization, the PZPL extracted from measurements should be smaller than the simulated Purcell (\({P}_{{{{{{{{\rm{ZPL}}}}}}}}}\le {P}_{{{{{{{{\rm{ZPL}}}}}}}}}^{{{{{{{{\rm{sim}}}}}}}}}\)). This enables us to put a lower bound on the quantum efficiency ΡQEââĽâ23.4% for the single T center (Supplementary Section 2.1).
Discussion
We now discuss pathways to improve the performance of the cavity-coupled single T center system. We note that the linewidth of the observed single T center is significantly larger than the Purcell enhanced lifetime-limited linewidth (2ĎâĂâ1.2âMHz). One culprit is the fast dephasing process, which necessitates further investigation to reveal its origin. Significant reduction of Îinh down to 33âMHz has been demonstrated for ensemble T centers in enriched 28Si23. In future work, SOI samples with an enriched silicon device layer can be prepared via molecular beam epitaxy38 to minimize the dephasing. Furthermore, local electrodes can be fabricated on the SOI device layer for implementing electrical field control to minimize the spectral diffusion via in situ tuning39 or depletion of the charge noises40. Lastly, focused-ion-beam-based41 and masked42 ion implantation can be leveraged to increase the yield of T center generation at the cavity center.
In summary, we have demonstrated enhanced light-matter interaction for a single T center by integrating it with a silicon nanophotonic cavity. This work opens the door to utilize single T centers in silicon for quantum information processing and networking applications. With realistic improvements in the quality factor of the optical cavity (Qâ=â5âĂâ105) and narrower linewidth in an enriched sample (Îâ~â10âMHz), a large atom-cavity cooperativity CââĽâ29 can be expected, which can lead to applications for high-fidelity dispersive spin readout43 and cavity-mediated spin-spin interactions44. Moreover, the current approach can enable parallel control and readout of multiple T centers in the cavity via the frequency domain addressing technique45. Finally, leveraging the mature silicon photonics technology, small-footprint and scalable T-center-spin-based silicon quantum photonic chips13 may be envisioned.
Note: While finalizing this manuscript, we became aware of a related publication on the detection of a single T center coupled to a cavity using above-band excitation46.
Methods
Device nanofabrication
All of the nanophotonic devices are fabricated on SOI samples (WaferPro). The SOI has a 220âÂąâ10ânm float zone grown P-type device layer with resistivity âĽ1000 Ίââ âcm. The buried oxide has a customized thickness of 2.3âÎźm for maximizing the GC coupling efficiency, and the handling layer has a thickness of 725âÎźm. We spin coat 400ânm electron beam (ebeam) resist ZEP520A (Zeon Specialty Materials Inc.) onto 9âĂâ9âmm2 SOI chips and bake at 170â°C for 5âmins. The sample is exposed using an Elionix ELS-G100 ebeam writer with a dosage of 225âÎźC/cm2, and subsequently developed in o-xylene at room temperature for 90 seconds and rinsed in isopropanol for 20 seconds. The pattern is then defined on the resist layer, which acts as the etching mask. The sample etching is performed using an inductively coupled plasma (ICP) reactive ion etcher (Oxford Plasmalab System 100/ICP 180) with SF6/C4F8 gases. The sample is kept at 0â°C during the etching process. After etching, the sample goes through a series of processes including oxygen plasma descum, dicing (into 4.5âĂâ4.5âmm2), resist stripping, and piranha cleaning before being transferred into the cryostat for measurements.
T center generation via ion implantation
T centers shown in this work are generated via a uniform ion implantation method following a published procedure35. We use an equal fluence for 12C and 1H during the ion implantation processes (IIâVI Coherent Corp). We perform 12C ion implantation at 7° direction, 35âkeV energy, followed by rapid thermal annealing (RTA) at 1000â°C for 20âs under an Ar background to repair lattice damage and substitute the implanted carbon24. Next, a second round implantation of 1H at 7° direction, 8âkeV energy is performed. After the two implantation steps, we boil the sample for 1âh in DI water, followed by a second RTA process at 420â°C for 3âmin with a N2 background.
Data availability
The data that support the findings of this study are openly available on the Harvard Dataverse at https://doi.org/10.7910/DVN/XCS15A.
References
Awschalom, D. D., Hanson, R., Wrachtrup, J. & Zhou, B. B. Quantum technologies with optically interfaced solid-state spins. Nat. Photon. 12, 516â527 (2018).
Togan, E. et al. Quantum entanglement between an optical photon and a solid-state spin qubit. Nature 466, 730â734 (2010).
Bernien, H. et al. Heralded entanglement between solid-state qubits separated by three metres. Nature 497, 86â90 (2013).
Pfaff, W. et al. Unconditional quantum teleportation between distant solid-state quantum bits. Science 345, 532â535 (2014).
Bhaskar, M. K. et al. Experimental demonstration of memory-enhanced quantum communication. Nature 580, 60â64 (2020).
Li, Q., Davanço, M. & Srinivasan, K. Efficient and low-noise single-photon-level frequency conversion interfaces using silicon nanophotonics. Nat. Photon. 10, 406â414 (2016).
Wolfowicz, G. et al. Vanadium spin qubits as telecom quantum emitters in silicon carbide. Sci. Adv. 6, eaaz1192 (2020).
Zhou, Y. et al. Room temperature solid-state quantum emitters in the telecom range. Sci. Adv. 4, eaar3580 (2018).
Dibos, A., Raha, M., Phenicie, C. & Thompson, J. D. Atomic source of single photons in the telecom band. Phys. Rev. Lett. 120, 243601 (2018).
Ourari, S. et al. Indistinguishable telecom band photons from a single Er ion in the solid state. Nature 620, 977â981 (2023).
Kim, J.-H. et al. Hybrid integration of solid-state quantum emitters on a silicon photonic chip. Nano Lett. 17, 7394â7400 (2017).
Wan, N. H. et al. Large-scale integration of artificial atoms in hybrid photonic circuits. Nature 583, 226â231 (2020).
Pelucchi, E. et al. The potential and global outlook of integrated photonics for quantum technologies. Nat. Rev. Phys. 4, 194â208 (2022).
Steger, M. et al. Quantum information storage for over 180 s using donor spins in a 28Si âsemiconductor vacuumâ. Science 336, 1280â1283 (2012).
Yin, C. et al. Optical addressing of an individual erbium ion in silicon. Nature 497, 91â94 (2013).
Gritsch, A., Weiss, L., FrĂźh, J., Rinner, S. & Reiserer, A. Narrow optical transitions in erbium-implanted silicon waveguides. Phys. Rev. X 12, 041009 (2022).
Berkman, I. R. et al. Millisecond electron spin coherence time for erbium ions in silicon. arXiv https://doi.org/10.48550/arXiv.2307.10021 (2023).
Chartrand, C. et al. Highly enriched 28Si reveals remarkable optical linewidths and fine structure for well-known damage centers. Phys. Rev. B 98, 195201 (2018).
Beaufils, C. et al. Optical properties of an ensemble of G-centers in silicon. Phys. Rev. B 97, 035303 (2018).
Redjem, W. et al. Single artificial atoms in silicon emitting at telecom wavelengths. Nat. Electron. 3, 738â743 (2020).
Komza, L. et al. Indistinguishable photons from an artificial atom in silicon photonics. arXiv https://doi.org/10.48550/arxiv.2211.09305 (2022).
Prabhu, M. et al. Individually addressable and spectrally programmable artificial atoms in silicon photonics. Nat. Commun. 14, 2380 (2023).
Bergeron, L. et al. Silicon-integrated telecommunications photon-spin interface. PRX Quantum 1, 020301 (2020).
Higginbottom, D. B. et al. Optical observation of single spins in silicon. Nature 607, 266â270 (2022).
DeAbreu, A. et al. Waveguide-integrated silicon T centres. Opt. Express 31, 15045â15057 (2023).
Tait, A. N. et al. Microring resonator-coupled photoluminescence from silicon W centers. J. Phys. Photon. 2, 045001 (2020).
Baron, Y. et al. Detection of single W-centers in silicon. ACS Photon. 9, 2337â2345 (2022).
Lee, C.-M. et al. High-efficiency single photon emission from a silicon T-center in a nanobeam. ACS Photon. 10, 3844â3849 (2023).
Purcell, E. M. Spontaneous emission probabilities at radio frequencies. In Confined Electrons and Photons: New Physics and Applications, 839â839 (Springer, 1995).
Lefaucher, B. et al. Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring. Appl. Phys. Lett. 122, 061109 (2023).
Redjem, W. et al. All-silicon quantum light source by embedding an atomic emissive center in a nanophotonic cavity. Nat. Commun. 14, 3321 (2023).
Saggio, V. et al. Cavity-enhanced single artificial atoms in silicon. arXiv https://doi.org/10.48550/arXiv.2302.10230 (2023).
Chen, S. et al. Hybrid microwave-optical scanning probe for addressing solid-state spins in nanophotonic cavities. Opt. Express 29, 4902â4911 (2021).
Liu, L., Pu, M., Yvind, K. & Hvam, J. M. High-efficiency, large-bandwidth silicon-on-insulator grating coupler based on a fully-etched photonic crystal structure. Appl. Phys. Lett. 96, 051126 (2010).
MacQuarrie, E. et al. Generating T centres in photonic silicon-on-insulator material by ion implantation. N. J. Phys. 23, 103008 (2021).
Meunier, M. et al. Telecom single-photon emitters in GaN operating at room temperature: embedment into bullseye antennas. Nanophotonics 12, 1405â1419 (2023).
Johnson, S. et al. Tunable cavity coupling of the zero phonon line of a nitrogen-vacancy defect in diamond. N. J. Phys. 17, 122003 (2015).
Liu, Y. et al. 28Silicon-on-insulator for optically interfaced quantum emitters. J. Cryst. Growth 593, 126733 (2022).
Acosta, V. et al. Dynamic stabilization of the optical resonances of single nitrogen-vacancy centers in diamond. Phys. Rev. Lett. 108, 206401 (2012).
Anderson, C. P. et al. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science 366, 1225â1230 (2019).
SchrĂśder, T. et al. Scalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructures. Nat. Commun. 8, 15376 (2017).
Toyli, D. M., Weis, C. D., Fuchs, G. D., Schenkel, T. & Awschalom, D. D. Chip-scale nanofabrication of single spins and spin arrays in diamond. Nano Lett. 10, 3168â3172 (2010).
Nguyen, C. et al. An integrated nanophotonic quantum register based on silicon-vacancy spins in diamond. Phys. Rev. B 100, 165428 (2019).
Evans, R. E. et al. Photon-mediated interactions between quantum emitters in a diamond nanocavity. Science 362, 662â665 (2018).
Chen, S., Raha, M., Phenicie, C. M., Ourari, S. & Thompson, J. D. Parallel single-shot measurement and coherent control of solid-state spins below the diffraction limit. Science 370, 592â595 (2020).
Islam, F. et al. Cavity-enhanced emission from a silicon T center. Nano. Lett. 24, 319â325 (2024).
Acknowledgements
We gratefully acknowledge Han Pu, Alexey Belyanin, and Tanguy Terlier for helpful discussions, and John Bartholomew for feedback on a manuscript draft. Support for this research was provided by the National Science Foundation (NSF, CAREER Award No. 2238298), the Robert A. Welch Foundation (Grant No. C-2134) and the Rice Faculty Initiative Fund. We acknowledge the use of cleanroom facilities supported by the Shared Equipment Authority at Rice University.
Author information
Authors and Affiliations
Contributions
A.J., U.F., Y.W. and S.C. contributed to the design and execution of the experiment. Y.W. and S.C. performed numerical modeling of the cavity-QED. A.J., U.F., Y.W. and S.C. analyzed the data and wrote the manuscript. S.C. supervised the whole project.
Corresponding author
Ethics declarations
Competing interests
The authors declare no competing interests.
Peer review
Peer review information
Nature Communications thanks Weibo Gao, and the other, anonymous, reviewer(s) for their contribution to the peer review of this work. A peer review file is available.
Additional information
Publisherâs note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Supplementary information
Rights and permissions
Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the articleâs Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the articleâs Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
About this article
Cite this article
Johnston, A., Felix-Rendon, U., Wong, YE. et al. Cavity-coupled telecom atomic source in silicon. Nat Commun 15, 2350 (2024). https://doi.org/10.1038/s41467-024-46643-8
Received:
Accepted:
Published:
DOI: https://doi.org/10.1038/s41467-024-46643-8
Comments
By submitting a comment you agree to abide by our Terms and Community Guidelines. If you find something abusive or that does not comply with our terms or guidelines please flag it as inappropriate.