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High-density integration of carbon nanotubes via chemical self-assembly

Abstract

Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications1,2,3,4,5,6,7. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon nanotubes with a density as high as 1 × 109 cm−2—two orders of magnitude higher than previous reports8,9. With this approach, we assembled a high density of carbon-nanotube transistors in a conventional semiconductor fabrication line and then electrically tested more than 10,000 devices in a single chip. The ability to characterize such large distributions of nanotube devices is crucial for analysing transistor performance, yield and semiconducting nanotube purity.

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Figure 1: Selective placement of carbon nanotubes by an ion-exchange process.
Figure 2: High density of individually positioned carbon nanotubes.
Figure 3: Demonstration of high-density carbon nanotube transistors (CNTs).

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Acknowledgements

The authors thank J. Bucchignano and G. Wright for their expert technical assistance with electron-beam lithography, and Q. Cao for helpful discussions.

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Contributions

H.P., A.A., G.S.T. and S.H. developed the carbon nanotube placement method. H.P., S.H. and A.D.F. fabricated and characterized the nanotube transistors. J.B.H., J.T. and W.H. developed the model and software for rapid assessment of the large sets of measured data. All authors contributed to discussing the results and writing manuscript.

Corresponding authors

Correspondence to Hongsik Park or Ali Afzali.

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The authors declare no competing financial interests.

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Park, H., Afzali, A., Han, SJ. et al. High-density integration of carbon nanotubes via chemical self-assembly. Nature Nanotech 7, 787–791 (2012). https://doi.org/10.1038/nnano.2012.189

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  • DOI: https://doi.org/10.1038/nnano.2012.189

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