Abstract
Electronic spins in semiconductors have been used extensively to explore the limits of external control over quantum mechanical phenomena1. A long-standing goal of this research has been to identify or develop robust quantum systems that can be easily manipulated, for future use in advanced information and communication technologies2. Recently, a point defect in diamond known as the nitrogen–vacancy centre has attracted a great deal of interest because it possesses an atomic-scale electronic spin state that can be used as an individually addressable, solid-state quantum bit (qubit), even at room temperature3. These exceptional quantum properties have motivated efforts to identify similar defects in other semiconductors, as they may offer an expanded range of functionality not available to the diamond nitrogen–vacancy centre4. Notably, several defects in silicon carbide (SiC) have been suggested as good candidates for exploration, owing to a combination of computational predictions and magnetic resonance data4,5,6,7,8,9,10. Here we demonstrate that several defect spin states in the 4H polytype of SiC (4H-SiC) can be optically addressed and coherently controlled in the time domain at temperatures ranging from 20 to 300 kelvin. Using optical and microwave techniques similar to those used with diamond nitrogen–vacancy qubits, we study the spin-1 ground state of each of four inequivalent forms of the neutral carbon–silicon divacancy, as well as a pair of defect spin states of unidentified origin. These defects are optically active near telecommunication wavelengths11, and are found in a host material for which there already exist industrial-scale crystal growth12 and advanced microfabrication techniques13. In addition, they possess desirable spin coherence properties that are comparable to those of the diamond nitrogen–vacancy centre. This makes them promising candidates for various photonic, spintronic and quantum information applications that merge quantum degrees of freedom with classical electronic and optical technologies2,14,15,16,17.
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References
Hanson, R. & Awschalom, D. D. Coherent manipulation of single spins in semiconductors. Nature 453, 1043–1049 (2008)
Awschalom, D. D. & Flatté, M. E. Challenges for semiconductor spintronics. Nature Phys. 3, 153–159 (2007)
Jelezko, F., Gaebel, T., Popa, I., Gruber, A. & Wrachtrup, J. Observation of coherent oscillations in a single electron spin. Phys. Rev. Lett. 92, 076401 (2004)
Weber, J. R. et al. Quantum computing with defects. Proc. Natl Acad. Sci. USA 107, 8513–8518 (2010)
Gali, A. Time-dependent density functional study on the excitation spectrum of point defects in semiconductors. Phys. Status Solidi B 248, 1337–1346 (2011)
Baranov, P. G. et al. EPR identification of the triplet ground state and photoinduced population inversion for a Si-C divacancy in silicon carbide. JETP Lett. 82, 441–443 (2005)
Son, N. T. et al. Divacancy in 4H-SiC. Phys. Rev. Lett. 96, 055501 (2006)
Mizuochi, N. et al. Continuous-wave and pulsed EPR study of the negatively charged silicon vacancy with S = 3/2 and C 3v symmetry in n-type 4H-SiC. Phys. Rev. B 66, 235202 (2002)
Son, N. T., Zolnai, Z. & Janzén, E. Silicon vacancy related T V 2a center in 4H-SiC. Phys. Rev. B 68, 205211 (2003)
Baranov, P. G., Bundakova, A. P. & Soltamov, A. A. Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy. Phys. Rev. B 83, 125203 (2011)
Saleh, B. E. A. & Teich, M. C. Fundamentals of Photonics Ch. 22 (Wiley, 1991)
Powell, A. et al. Growth of SiC substrates. Int. J. High Speed Electron. Syst. 16, 751–777 (2006)
Zetterling, C.-M. (ed.) Process Technology for Silicon Carbide Devices (Institution of Electrical Engineers, 2002)
O'Brien, J. L., Furusawa, A. & Vučković, J. Photonic quantum technologies. Nature Photon. 3, 687–695 (2009)
Maze, J. R. et al. Nanoscale magnetic sensing with an individual electronic spin in diamond. Nature 455, 644–647 (2008)
Balasubramanian, G. et al. Nanoscale imaging magnetometry with diamond spins under ambient conditions. Nature 455, 648–651 (2008)
Ladd, T. D. et al. Quantum computers. Nature 464, 45–53 (2010)
Saddow, S. E. & Agarwal, A. (eds) Advances in Silicon Carbide Processing and Applications (Artech House, 2004)
Ryu, S.-H., Kornegay, K. T., Cooper, J. A. & Melloch, M. R. Digital CMOS IC’s in 6H-SiC operating on a 5-V power supply. IEEE Trans. Electron Dev. 45, 45–53 (1998)
Cheung, R. (ed.) Silicon Carbide Microelectromechanical Systems for Harsh Environments (Imperial College Press, 2004)
Liu, L. & Edgar, J. H. Substrates for gallium nitride epitaxy. Mater. Sci. Eng. R 37, 61–127 (2002)
Berger, C. et al. Electronic confinement and coherence in patterned epitaxial graphene. Science 312, 1191–1196 (2006)
Magnusson, B. & Janzén, E. Optical characterization of deep level defects in SiC. Mater. Sci. Forum 483–485, 341–346 (2005)
Carlos, W. E., Glaser, E. R. & Shanabrook, B. V. Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC. Physica B 340–342, 151– 155. (2003)
Carlos, W. E., Graces, N. Y., Glaser, E. R. & Fanton, M. A. Annealing of multivacancy defects in 4H-SiC. Phys. Rev. B 74, 235201 (2006)
Son, N. T. et al. Identification of divacancies in 4H-SiC. Physica B 376–377, 334–337 (2006)
Hanson, R., Gywat, O. & Awschalom, D. D. Room-temperature manipulation and decoherence of a single spin in diamond. Phys. Rev. B 74, 161203(R) (2006)
de Lange, G., Wang, Z. H., Ristè, D., Dobrovitski, V. V. & Hanson, R. Universal dynamical decoupling of a single solid-state spin from a spin bath. Science 330, 60–63 (2010)
Stanwix, P. L. et al. Coherence of nitrogen-vacancy electronic spin ensembles in diamond. Phys. Rev. B 82, 201201(R) (2010)
van Oort, E. & Glasbeek, M. Optically detected low field electron spin echo envelope modulations of fluorescent N-V centers in diamond. Chem. Phys. 143, 131–140 (1990)
Acknowledgements
We are grateful to G. D. Fuchs, A. Janotti, D. M. Toyli, C. G. Van de Walle, J. B. Varley and J. R. Weber for discussions. We thank M. E. Nowakowski for help with sample preparation. This work was supported by the Air Force Office of Scientific Research (AFOSR) and the Defense Advanced Research Projects Agency (DARPA).
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Koehl, W., Buckley, B., Heremans, F. et al. Room temperature coherent control of defect spin qubits in silicon carbide. Nature 479, 84–87 (2011). https://doi.org/10.1038/nature10562
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DOI: https://doi.org/10.1038/nature10562
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