News & Views

A van der Waals integration approach can be used to deposit single-crystal strontium titanate on two-dimensional molybdenum disulfide and tungsten diselenide, creating high-performance n- and p-doped field-effect transistors.

Thin flakes of Cr₅Te₈, which exhibit a colossal anomalous Hall effect, can be synthesized using a phase-controlled chemical vapour deposition technique.

Hole spin qubits that operate at temperatures close to 4 K can be created in fin field-effect transistors similar to those used in advanced integrated circuits.

Indium oxide transistors with an ultrashort channel of less than 10 nm can be fabricated using atomic layer deposition, a technique that is compatible with complementary metal–oxide–semiconductor (CMOS) processes.

Multi-layer programmable metasurfaces can be used to construct diffractive neural networks in which radio waves are directly processed.

In-memory computing chips based on magnetoresistive random-access memory devices can provide energy-efficient hardware for machine learning tasks.

Field-effect transistors based on heterojunctions of hydrogen-terminated diamond and hexagonal boron nitride can offer surface carrier mobilities as high as 680 cm² V^–1 s^–1.

By incorporating oxygen into the chemical vapour deposition growth of molybdenum disulfide, sulfur vacancies can be passivated and contact resistances lowered.

Inorganic molecular crystal films of antimony trioxide can be grown on 4-inch wafers via a thermal evaporation process and used as a top-gate oxide in two-dimensional molybdenum disulfide transistors.

A monolithic three-dimensional integrated system based on CMOS logic, compute-in-memory and associative memory can be used to efficiently implement one-shot learning.

Printed thin-film transistors and circuits fabricated on plastic strips can be wrapped around fibres to create stretchable electronics.

Monolayer transition metal dichalcogenide transistors can be fabricated on 300 mm wafers using an approach that is compatible with back-end-of-line process temperatures.

Textile-integrated metamaterials can be used to propagate signals across the body, and between different people, allowing a network of sensors to be connected and powered.

A thin and rollable high-resolution image sensor can be created by placing solution-processed metal halide perovskite photodiodes over an amorphous indium gallium zinc oxide transistor backplane.

Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.

The direction of photocurrent in a p–n heterojunction device can be switched by using different wavelengths of light.

Long and thin graphene nanoribbons with atomically smooth edges can be fabricated in high yield by squashing carbon nanotubes.

Vertical organic thin-film transistors can be used to create complementary circuits that operate at high frequencies.

A flexible microprocessor with more than 18,000 NAND gates can be manufactured using metal-oxide thin-film transistor technology.