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Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes

Nature Electronics volume 6, pages 836–838 (2023)Cite this article

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Matters Arising to this article was published on 22 November 2023

The Original Article was published on 09 June 2022

arising from H. K. Ng et al. Nature Electronics https://doi.org/10.1038/s41928-022-00777-z (2022)

Improving the charge-carrier mobility of two-dimensional (2D) semiconductors is important for the development of electronic devices based on such materials. Recently, Ng et al.1 reported rippled molybdenum disulfide (MoS2) transistors on bulged silicon nitride (SiNx) substrates with electron mobilities of up to ~900 cm2 V−1 s−1. The high mobility values were attributed to the suppression of electron–phonon scattering by the lattice distortion in the rippled MoS2 channel. However, the mobility values are likely to be overestimated due to invasive voltage probes in the four-probe measurement set-up, which cause a positive threshold voltage shift near the voltage probes and an overestimation of the apparent field-effect mobility.

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Fig. 1: Mobility overestimation due to invasive voltage probes and threshold voltage shift.
Fig. 2: Comparison of different configurations of four-probe measurement.

Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

References

  1. Ng, H. K. et al. Improving carrier mobility in two-dimensional semiconductors with rippled materials. Nat. Electron. 5, 489–496 (2022).

    Article  Google Scholar 

  2. Nasr, J. R., Schulman, D. S., Sebastian, A., Horn, M. W. & Das, S. Mobility deception in nanoscale transistors: an untold contact story. Adv. Mater. 31, 1806020 (2019).

    Article  Google Scholar 

  3. Pang, C. et al. Mobility extraction in 2D transition metal dichalcogenide devices—avoiding contact resistance implicated overestimation. Small 17, 2100940 (2021).

    Article  Google Scholar 

  4. Dorow, C. J. et al. Gate length scaling beyond Si: Mono-layer 2D channel FETs robust to short channel effects. In Proc. 2022 IEEE International Electron Devices Meeting (IEDM) 7.5.1–7.5.4 (IEEE, 2022).

  5. Shen, T., Penumatcha, A. V. & Appenzeller, J. Strain engineering for transition metal dichalcogenides based field effect transistors. ACS Nano 10, 4712–4718 (2016).

    Article  Google Scholar 

  6. Huard, B., Stander, N., Sulpizio, J. A. & Goldhaber-Gordon, D. Evidence of the role of contacts on the observed electron-hole asymmetry in graphene. Phys. Rev. B 78, 121402 (2008).

    Article  Google Scholar 

  7. Blake, P. et al. Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point. Solid State Commun. 149, 1068–1071 (2009).

    Article  Google Scholar 

  8. Karnatak, P. et al. Current crowding mediated large contact noise in graphene field-effect transistors. Nat. Commun. 7, 13703 (2016).

    Article  Google Scholar 

  9. Choi, H. H. et al. Accurate extraction of charge carrier mobility in 4‐probe field‐effect transistors. Adv. Funct. Mater. 28, 1707105 (2018).

    Article  Google Scholar 

  10. Khakifirooz, A., Nayfeh, O. M. & Antoniadis, D. A simple semiempirical short-channel MOSFET current–voltage model continuous across all regions of operation and employing only physical parameters. IEEE Trans. Electron Devices 56, 1674–1680 (2009).

    Article  Google Scholar 

  11. Bittle, E. G., Basham, J. I., Jackson, T. N., Jurchescu, O. D. & Gundlach, D. J. Mobility overestimation due to gated contacts in organic field-effect transistors. Nat. Commun. 7, 10908 (2016).

    Article  Google Scholar 

  12. Yi, H. T., Chen, Y., Czelen, K. & Podzorov, V. Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors. Adv. Mater. 23, 5807–5811 (2011).

    Article  Google Scholar 

  13. Choi, H. H., Cho, K., Frisbie, C. D., Sirringhaus, H. & Podzorov, V. Critical assessment of charge mobility extraction in FETs. Nat. Mater. 17, 2–7 (2018).

    Article  Google Scholar 

  14. McCulloch, I., Salleo, A. & Chabinyc, M. Avoid the kinks when measuring mobility. Science 352, 1521–1522 (2016).

    Article  Google Scholar 

  15. Liu, T. et al. Crested two-dimensional transistors. Nat. Nanotechnol. 14, 223–226 (2019).

    Article  Google Scholar 

  16. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).

    Article  Google Scholar 

  17. Cheng, Z. et al. How to report and benchmark emerging field-effect transistors. Nat. Electron. 5, 416–423 (2022).

    Article  Google Scholar 

  18. Ber, E., Grady, R. W., Pop, E. & Yalon, E. Uncovering the different components of contact resistance to atomically thin semiconductors. Adv. Electron. Mater. 9, 2201342 (2023).

    Article  Google Scholar 

  19. Cui, X. et al. Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform. Nat. Nanotechnol. 10, 534–540 (2015).

    Article  Google Scholar 

  20. Mazin, I. Inverse Occam’s razor. Nat. Phys. 18, 367–368 (2022).

    Article  Google Scholar 

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  1. Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA

    Peng Wu

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P.W. developed the model and wrote the manuscript.

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Correspondence to Peng Wu.

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Wu, P. Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nat Electron 6, 836–838 (2023). https://doi.org/10.1038/s41928-023-01043-6

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