Correction to: Light Science & Applications
https://doi.org/10.1038/s41377-022-00756-1 published online 07 April 2022
Following publication of this article1, it is noticed Fig. 6d contained a typo: the unit of x-coordinate should be A, not mA.
The correct Fig. 6d is provided in this Correction.
The original article has been updated.
Reference
Chang, H., Liu, Z. & Yang, S. et al. Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light Sci. Appl. 11, 88 (2022).
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Chang, H., Liu, Z., Yang, S. et al. Author Correction: Graphene-driving strain engineering to enable strain-free epitaxy of AlN film for deep ultraviolet light-emitting diode. Light Sci Appl 11, 119 (2022). https://doi.org/10.1038/s41377-022-00802-y
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DOI: https://doi.org/10.1038/s41377-022-00802-y
