Compared with unipolar transistors, ambipolar transistors, which can easily switch between n-type and p-type behavior by applying an electric field, are most promising candidates since they can effectively simplify circuit design and save the layout area in CMOS. In this study, we take a deep insight into the thickness dependent physical properties of WSe2, where the optical properties, electric field screening effect, and the ambipolar transport behavior are systematically studied. Furthermore, the investigation of ambipolar WSe2 transistors in analogue circuits exhibiting gate-controlled phase change directly explores its practical application in 2D communication electronics.
- Zegao Wang
- Qiang Li
- Mingdong Dong