Volume 4 Issue 10, October 2021

Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.

Large-area electronics based on metal-oxide thin-film transistors can be used to create integrated phased arrays for radiofrequency front-ends in 5G — and future 6G — communication systems.

This Review examines the development of novel physical effects and materials for wireless power transfer, considering techniques based on coherent perfect absorption, parity–time symmetry and exceptional points, and on-site power generation, as well as the use of metamaterials and metasurfaces, and acoustic power transfer.

Confocal fluorescence microscopy and magnetic resonance can be used to induce and probe charge transport between individual nitrogen-vacancy centres in diamond.

Electrically induced transitions between hexagonal and monoclinic phases of molybdenum ditelluride can be used to make a second-harmonic-generation modulator with an on/off ratio of 1,000 and a broad bandwidth.

A monolayer of tungsten oxyselenide, created by oxidizing a layer of tungsten diselenide, can be used to efficiently dope graphene, leading to a room-temperature mobility of 2,000 cm² V^–1 s^–1 at a hole density of 3 × 10¹³ cm^–2.

The ferroelectric polarization of epitaxial thin films of germanium telluride can be switched by electrical gating and used to control spin-to-charge conversion.

Arrays of memcapacitor devices that work via charge shielding can be used to implement artificial neural networks and could potentially offer an energy efficiency of 29,600 tera-operations per second per watt.

Phased array systems capable of beamforming at microwave frequencies can be created from large-area electronics based on zinc oxide thin-film transistors.