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Pulse engineering techniques can reduce error rates in silicon quantum dot spin qubits by a factor of three compared with state-of-the-art silicon devices. The schematic illustration on the cover highlights the errors (depicted as coloured stripes) accumulated over time for a 90° rotation of two single-spin qubits in a noisy environment, one using conventional square pulse control (far) and the other using optimized pulse engineering techniques (near).
This Review Article examines the development of self-healing electronic materials and devices, explores their potential applications and discusses the challenges that exist in delivering practical systems.
Pulse engineering techniques can be used to reduce the average Clifford gate error rates for silicon quantum dot spin qubits down to 0.043%, a factor of three improvement over state-of-the-art silicon devices.
Electronic components made from two-dimensional MoTe2 can be chemically synthesized and integrated in a single step, creating devices in which each component in the active layer is connected via covalent bonds.