Volume 2 Issue 5, May 2019

Interface-induced asymmetric exchange coupling can create a chiral magnetic phase in a magnetic insulator at above room temperature.

Clean and damage-free 2D transistors can be created with the help of transferred contacts made from hexagonal boron nitride with embedded metal.

A flexible phased array that has an areal mass density of only 0.1 g cm^–2 could help deliver a new era of lightweight, portable and reconfigurable communication systems.

The topological Hall effect is observed at above room temperature in a bilayer heterostructure composed of thulium iron garnet and platinum, suggesting the formation of skyrmions in a magnetic insulator through the interfacial Dzyaloshinskii–Moriya interaction.

Bilayer WSe₂ field-effect transistors with near ideal device characteristics can be created using transferred via contacts made from metal-embedded hexagonal boron nitride.

By combining a CMOS-based integrated circuit with flexible and collapsible radiating structures, a scalable phased array architecture can be fabricated that has an areal mass density of only 0.1 g cm⁻².