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This Perspective examines the concept of near-senor and in-sensor computing in which computation tasks are moved partly to the sensory terminals, exploring the challenges facing the field and providing possible solutions for the hardware implementation of integrated sensing and processing units using advanced manufacturing technologies.
An epicardial patch made from materials that match the mechanical softness of heart tissue can perform spatiotemporal mapping of electrophysiological activity, as well as strain and temperature sensing, pacing and ablation therapies, and energy harvesting, while deforming with a beating heart.
The magnetization of a cobalt thin film can be reversed by spin–orbit torques using picosecond electrical pulses that are generated by photoconductive switches.
Nanoscale magnetic skyrmions that are generated in metallic multilayers using on-chip heating diffuse from hot to cold regions and can be thermoelectrically detected via the Nernst voltage.
A cleaning–healing–cleaning method can effectively eliminate ionic defects at the surface of perovskite films, resulting in reliable and high-performance perovskite transistors.
Nanoscale electrodes fabricated using adhesion lithography can be combined with solution-processed metal oxide semiconductors to create Schottky diodes with performance suitable for 5G communications and beyond.
Green perovskite light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness can be created by depositing an ultrathin layer of strongly polar lithium fluoride between the perovskite and hole-transport layers.
High-density memristive crossbar arrays made from two-dimensional hexagonal boron nitride can be fabricated with a yield of 98% and used to emulate artificial neural networks.
A magnonic directional coupler with submicrometre dimensions could be used as a building block for integrated magnonic devices, such as half-adders, that have low energy consumption and small footprint.
This Perspective examines the use of ferroelectric field-effect transistor technologies in current embedded non-volatile memory applications and future in-memory, biomimetic and alternative computing models, arguing that the devices will be a key component in the development of data-centric computing.
A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.
Field-effect transistors that use carbon nanotubes as the channel material and an ion gel as the gate exhibit a high tolerance to radiation and can be recovered following radiation damage using a simple annealing process.
With the help of a gate electrode to control the charge state of individual molecules on graphene, information can be moved along a one-dimensional molecular chain, mimicking the behaviour of an electronic shift register.