Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain
the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in
Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles
and JavaScript.
A manufacturing technology that uses a deformable balloon stamp to pick up pre-fabricated electronic devices and print them onto three-dimensional surfaces can be used to create devices with curvy shapes, including electrically small antennas, hemispherical solar cells and smart contact lenses.
By integrating memristor arrays with CMOS circuitry, a computing-in-memory architecture can be created that could provide efficient deep neural network processors.
A large non-adiabatic spin-transfer torque in an antiferromagnetically coupled ferrimagnet can provide fast and efficient control of spin textures — and challenges current understanding of such effects.
Non-adiabatic spin-transfer torque in antiferromagnetically coupled ferrimagnets acts like a staggered magnetic field and can induce efficient domain wall motion.
This Perspective explores the development of solution-processable van der Waals thin films, examining their potential for application in large-area wearable electronics and the challenges that exist in delivering practical devices.
Suspended double-layer graphene ribbons with attached silicon proof masses can be used to create transducers for nanoelectromechanical system accelerometers that occupy at least two orders of magnitude smaller die area than conventional state-of-the-art silicon accelerometers.
Nanoscale vacuum channel transistors, which have a vertical surround-gate configuration, can be fabricated on 150 mm silicon carbide wafers using conventional integrated circuit processing technology.
A 1 Mb non-volatile computing-in-memory system, which integrates a resistive memory array with control and readout circuits using an established 65 nm foundry CMOS process, can offer high energy efficiency and low latency for Boolean logic and multiply-and-accumulation operations.
Single-transistor dynamic random access memory (DRAM) cells, created using the III–V compound semiconductor indium gallium arsenide, can be scaled down to a gate length of 14 nm.
A wearable wireless sensor network for personalized healthcare can be created through the indirect integration of soft on-skin sensors and rigid in-clothes circuits.
Ethical codes, ethics committees, and respect for autonomy have been key to the development of medical ethics — elements that digital ethics would be advised to emulate.