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Carbon-related point defects can be isolated in a commercial silicon-on-insulator wafer, acting as artificial atoms that provide efficient polarized single-photon emission at wavelengths suitable for long-distance propagation in optical fibres.
Using a gate decomposition strategy that requires the calibration of a single pulse, a family of XY entangling gates can be implemented in a superconducting qubit architecture and used to reduce circuit depth for generic quantum algorithms.
An epicardial patch made from materials that match the mechanical softness of heart tissue can perform spatiotemporal mapping of electrophysiological activity, as well as strain and temperature sensing, pacing and ablation therapies, and energy harvesting, while deforming with a beating heart.
The magnetization of a cobalt thin film can be reversed by spin–orbit torques using picosecond electrical pulses that are generated by photoconductive switches.
Nanoscale magnetic skyrmions that are generated in metallic multilayers using on-chip heating diffuse from hot to cold regions and can be thermoelectrically detected via the Nernst voltage.
Nanoscale electrodes fabricated using adhesion lithography can be combined with solution-processed metal oxide semiconductors to create Schottky diodes with performance suitable for 5G communications and beyond.
Green perovskite light-emitting diodes with external quantum efficiencies of up to 19.1% at high brightness can be created by depositing an ultrathin layer of strongly polar lithium fluoride between the perovskite and hole-transport layers.
High-density memristive crossbar arrays made from two-dimensional hexagonal boron nitride can be fabricated with a yield of 98% and used to emulate artificial neural networks.
A magnonic directional coupler with submicrometre dimensions could be used as a building block for integrated magnonic devices, such as half-adders, that have low energy consumption and small footprint.
A three-stage solution-based cleaning technique can increase the room-temperature mobility and reduce the hysteresis of organometal halide perovskite transistors by decreasing the surface defects in the perovskite films.
A nanoplasmonic technique was used to investigate in operando the switching properties of materials used in redox random access memories, providing insight into the operation and potential breakdown mechanisms of the devices.
One-dimensional molecular arrays on graphene field-effect transistors can be reversibly switched between different periodic charge states by tuning the graphene Fermi level via a back-gate electrode and by manipulating individual molecules, allowing them to function as a nanoscale shift register.
The superionic phase transition in silver iodide can be used to tailor the carrier type in two-dimensional tungsten diselenide and create programmable transistors, diodes and logic gates, the functions of which can be erased by external triggers such as ultraviolet irradiation.
Wafer-scale monolayers of MoS2 can be used to create flexible transistors and circuits that exhibit on/off ratios of 1010, current densities of ~35 μA μm−1 and mobilities of ~55 cm2 V−1 s−1.
By integrating a MoS2 photodetector with a floating-gate memory device, a nanoscale collision detector can be created that mimics the escape response of the lobula giant movement detector neuron.
By using carbon nanotubes as a channel material, an ion gel as a gate and polyimide as a substrate, field-effect transistors can be created that have a high radiation tolerance and can be repaired by annealing.
An operational amplifier that uses the two-dimensional semiconductor molybdenum disulfide as the active material can be used to create complex analogue circuits, including inverters, integrators and amplifiers.
A two-terminal device that uses an array of carbon nanotubes as the source contact can excite electroluminescence from a variety of materials, producing electroluminescence from long-wave infrared to ultraviolet wavelengths, with onset voltages approaching the optical energy gap of the emitting material.
Monolayer graphene can be magnetized by coupling to an antiferromagnetic thin film of chromium selenide, resulting in an exchange splitting energy as high as 134 meV at 2 K.
An atomically thin high-κ gate dielectric of Bi2SeO5 can be formed via layer-by-layer oxidization of an underlying two-dimensional semiconductor, allowing high-performance field-effect transistors and inverters to be fabricated.