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Small electronic devices can be wirelessly powered from anywhere in a room using multidirectional surface currents that generate widely distributed three-dimensional magnetic field patterns.
Wirelessly powered microchips, which have an ~1 GHz electromagnetic transcutaneous link to an external telecom hub, can be used for multichannel in vivo neural sensing, stimulation and data acquisition.
Microscale three-dimensional thermoelectric architectures can be fabricated through the direct writing of particle-based thermoelectric inks and used to create microthermoelectric generators that exhibit a power density of 479.0 μW cm–2.
A smartphone-based system that uses deep learning algorithms for local decision support, and incorporates blockchain technology to provide secure data connectivity and management, can be used for multiplexed DNA diagnosis of malaria.
An Ising solver that is based on a network of electrically coupled phase-transition nano-oscillators, which provides a continuous-time dynamical system, can be used to efficiently solve a non-deterministic polynomial time (NP)-hard MaxCut problem.
An organic transistor that incorporates two bulk heterojunctions can exhibit active photoadaptation behaviour for light intensities that range over six orders of magnitude.
Through the monolithic integration of enhancement-mode n-type and p-type gallium nitride field-effect transistors, complementary integrated circuits including latch circuits and ring oscillators can be created for use in high-power and high-frequency applications.
Organic n- and p-type vertical transistors, with considerably shorter channel lengths than their planar counterparts, can be used to create complementary metal–oxide–semiconductor (CMOS)-like inverters and ring oscillators that operate in the megahertz frequency range.
Domain wall devices based on perpendicular magnetic tunnel junctions with a hybrid free layer design can offer electrical read and write, and fast domain wall motion driven via spin–orbit torque.
Measurements of one-dimensional Coulomb drag between adjacent edge states of quantum spin Hall insulators that are separated by an air gap suggest that quantum spin Hall effects could be used to suppress the impact of Coulomb interactions on the performance of future nanocircuits.
Electrically tunable metamaterial-inspired devices in the microwave range can be created by using resonators that are integrated with organic electrochemical transistors and are entirely fabricated via inkjet-printed onto polyimide substrates.
Transistors based on arrays of aligned carbon nanotubes can exhibit cutoff frequencies of up to 540 GHz, and could be further scaled for operation at millimetre-wave and terahertz frequencies.
Electric-field-induced second harmonic generation can be used to measure the in-plane electric field in gallium nitride high-electron-mobility transistors and probe how dopants influence the electric field distribution.
Curvy and shape-adaptive imagers with high pixel fill factors and tunable focusing power can be created by transferring an array of ultrathin silicon optoelectronic pixels with a kirigami design onto curvy surfaces using conformal additive stamp printing.
By transferring two-dimensional semiconductors from rigid growth substrates together with nano-patterned metal contacts, flexible field-effect transistors can be fabricated with channel lengths down to 60 nm.
Boron arsenide and boron phosphide cooling substrates can be integrated with other materials, including the wide-bandgap semiconductor gallium nitride, creating structures that exhibit high thermal boundary conductances and high-electron-mobility transistors that exhibit low hot-spot temperatures.
Electromagnetic waves, which are either artificially introduced or present in the immediate surroundings, can couple to the surface of the human body, creating a power transmission and energy harvesting method that can be used to provide sustainable power to wearable devices all around the body.
A microstrip patch antenna array and a single high-electron-mobility transistor, which are created with inkjet printing, can be used for backscatter communication at millimetre-wave frequencies, providing a bit rate of two gigabits per second and with a front-end energy consumption of only 0.17 pJ per bit.