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A microstructured liquid metal fibre can be used as a soft transmission line probe for reflectometry, allowing electronic textiles to be created that can decipher convoluted mechanical stimulation.
The monolithic integration of electronic and plasmonic technologies can be used to create electro-optic transmitters capable of symbol rates beyond 100 GBd.
Resistive switching in atomically thin sheets of hexagonal boron nitride can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies.
A neurotransistor made from a silicon nanowire transistor coated by an ion-doped sol–gel silicate film can emulate the intrinsic plasticity of the neuronal membrane.
A parity–time symmetric system based on two coupled acoustic resonators in a lithium niobate platform can achieve non-reciprocal propagation of acoustic waves.
A single ferroelectric field-effect transistor, which is made from ferroelectric hafnium oxide, can be used as a full-wave rectifier and frequency doubler.
Semiconducting metal oxide gas sensors with a linear response, broad dynamic range and high baseline stability can be created with the help of a dielectric excitation technique.
A parity–time symmetric circuit that uses a switch-mode amplifier and current-sensing phase-delay feedback can wirelessly transfer around 10 W of power to a moving device with a nearly constant total efficiency of 92%.
A favourable scaling law for the magnetic state readout of CoFe/Pt nanostructure devices allows large spin Hall signals of 0.3 Ω at room temperature to be obtained, which could be useful in the development of spin-logic devices.
A three-dimensional circuit composed of eight layers of monolithically integrated memristive devices is built and used to implement complex neural networks, demonstrating accurate MNIST classification and effective edge detection in videos.
A 3D printing technique that produces structures with programmable patterns of charged surface, allowing different functional materials to be deposited in pre-defined regions, can be used to create electronic devices with a single printing step.
Two-dimensional metallic WTe2 and MoTe2 layers can be combined with a semiconducting MoS2 monolayer to create metal–semiconductor junctions that are free from substantial disorder effects and Fermi-level pinning.
By embedding silver nanoparticles in the electron transport layer, solution-processed quantum-dot-based photodetectors with a high photon-to-electron conversion efficiency of 6.5% and a low turn-on voltage of 2.5 V can be created for use in infrared imaging applications.
A flexible microsystem that has an integrated coil to enable wireless energy transfer via inductive coupling can offer controlled locomotion using two catalytic micro-engines and controlled actuation using thermoresponsive micro-arms.
A solution-processed perovskite diode that functions as both optical transmitter and receiver can be used to build a monolithic pulse sensor and a bidirectional optical communication system.
A quantum point contact formed in the two-dimensional electron gas of a LaAlO3/SrTiO3 interface exhibits quantized conductance due to ballistic transport in a controllable number of one-dimensional conducting channels.
The electrical current-induced creation, motion, detection and deletion of skyrmions in ferrimagnetic multilayers can be used to mimic the behaviour of biological synapses, providing devices that could be used for neuromorphic computing tasks such as pattern recognition.
A digital platform that integrates a metasurface based on electronic varactors with an optical interrogation network based on photodiodes can be programmed by visible light to implement electromagnetic functions, including microwave cloaking, illusion and vortex beam generation.
Pillars of antiferromagnetic PtMn, grown on a heavy-metal layer, can be reversibly switched between different magnetic states by electric currents, illustrating the potential of silicon-compatible antiferromagnetic materials in the development of memory and computing devices.