Technology breakthroughs at the 2022 IEEE International Electron Devices Meeting, where transistors remain centre stage, 75 years after their invention.
Srabanti Chowdhury and Jungwoo Joh, publicity chairs of the 2022 IEEE International Electron Devices Meeting, tell Nature Electronics about this year’s meeting, which takes place in San Francisco in December.
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Two-dimensional semiconductors can be used as a channel material in gate-all-around nanosheet field-effect transistors.
A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lower the power consumption of data storage and management.
High-electron-mobility transistors with a diamond coating on their top and side surfaces can effectively dissipate heat in high-power electronics applications.