Two-dimensional semiconductors can be used as a channel material in gate-all-around nanosheet field-effect transistors.
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Chen, Z. Gate-all-around nanosheet transistors go 2D. Nat Electron 5, 830–831 (2022). https://doi.org/10.1038/s41928-022-00899-4
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DOI: https://doi.org/10.1038/s41928-022-00899-4
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Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures
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