Collection 

Ultrawide bandgap semiconductors

Submission status
Open
Submission deadline

In the realm of semiconductor materials research, significant attention and effort have been directed towards the exploration of ultra-wide bandgap (UWBG) semiconductors. Due to their unique electronic properties, which include superior electron mobility, high breakdown voltage, and extraordinary thermal conductivity, UWBG semiconductors offer the potential to transcend the limitations of traditional semiconductor materials, thereby revolutionizing various technological domains.The current landscape of UWBG semiconductor research is characterized by a dynamic interplay between innovative growth methodologies and device configuration engineering. Researchers are striving to achieve optimal electronic properties of UWBG semiconductors by developing novel synthesis and structure engineering strategies. These strategies aim to control structural parameters such as stoichiometry, defects, strains, and doping profiles. Concurrently, research on device architecture design encompasses tailoring heterostructures, gate dielectrics, and contact interfaces to fully harness the capabilities of UWBG semiconductors.

These collective efforts are poised to contribute to the realization of innovative technologies, examples of which include high-frequency electronic devices, ultra-efficient optoelectronic devices, and robust power electronics designed for extreme environments.

Submit manuscript
Submission guidelines
Manuscript editing services
Nanodevices

Editors

Uttam Singisetti, PhD, University at Buffalo, USA

Uttam Singisetti is a Professor in the Electrical Engineering department, University at Buffalo, USA. Professor Singisetti’s research is in advanced electronic materials and devices. He has carried out seminal work in understanding of the electron transport properties in UWBG semiconductors and development of high performance UWBG devices. His group has reported groundbreaking advances in gallium-oxide power and RF devices. Professor Singisetti has been an Editorial Board Member of Scientific Reports since 2023.    

 

Tian-Li Wu, PhD, National Yang Ming Chiao Tung University (NYCU), Taiwan

Tian-Li Wu is an Associate Professor at National Yang Ming Chiao University, Taiwan. Professor Wu’s researches mainly focus on the on wide bandgap power semiconductor technologies and the investigation of reliability issues in wide bandgap power electronics. Professor Wu has been working as an Editorial Board Member of Scientific Reports since 2023.

 

 

Geonwook Yoo, PhD, School of Electronic Engineering at Soongsil Unviersity, South Korea

Geonwook Yoo an Associate Professor at the School of Electronic Engineering, Soongsil University. His current research interests include III-N and ultrawide bandgap semiconductor devices including physics-based technology computer-aided design, fabrication processes, and integration. Professor Yoo has been an Editorial Board Member for Scientific Reports since 2023.