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Ultrawide bandgap semiconductors

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In the realm of semiconductor materials research, significant attention and effort have been directed towards the exploration of ultra-wide bandgap (UWBG) semiconductors. Due to their unique electronic properties, which include superior electron mobility, high breakdown voltage, and extraordinary thermal conductivity, UWBG semiconductors offer the potential to transcend the limitations of traditional semiconductor materials, thereby revolutionizing various technological domains.The current landscape of UWBG semiconductor research is characterized by a dynamic interplay between innovative growth methodologies and device configuration engineering. Researchers are striving to achieve optimal electronic properties of UWBG semiconductors by developing novel synthesis and structure engineering strategies. These strategies aim to control structural parameters such as stoichiometry, defects, strains, and doping profiles. Concurrently, research on device architecture design encompasses tailoring heterostructures, gate dielectrics, and contact interfaces to fully harness the capabilities of UWBG semiconductors.

These collective efforts are poised to contribute to the realization of innovative technologies, examples of which include high-frequency electronic devices, ultra-efficient optoelectronic devices, and robust power electronics designed for extreme environments.

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