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Thin-film transistors for large-area electronics

Nature Electronics volume 6, pages 963–972 (2023)Cite this article

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Abstract

Thin-film transistors (TFTs) are a key technology in large-area electronics and can be manufactured uniformly over large areas—on glass or flexible substrates—at lower processing temperatures and costs than complementary metal–oxide–semiconductor (CMOS)-based transistors. The transistors are used in established applications such as flat-panel displays and X-ray detectors, and are of potential use in a range of emerging applications. Here we discuss the development of TFTs for large-area electronics. We explore the use of TFTs—which can be based on hydrogenated amorphous silicon, low-temperature polycrystalline silicon, amorphous oxide semiconductors and organic semiconductors—in displays and sensors, as well as digital circuits and memory. We also consider their potential use in emerging applications such as neuromorphic computing.

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Fig. 1: Atomic arrangement, band structure and device structure of crystalline silicon, amorphous silicon and amorphous oxide transistors.
Fig. 2: Schematic diagrams of TFTs in display and image sensors.
Fig. 3: Instability issue as a sign of Vth shift after long-term bias stressing, improving strategies from composition change to double channel.
Fig. 4: Representative works in non-display applications of TFTs.

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Acknowledgements

This work was supported by the National Key R&D Program of China (grants nos. 2022YFB3607200 and 2022YFA1204202), by the Opening Project of the Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, and by the National Natural Science Foundation of China (grants nos. 61890944, 92264204, 62274178, 61720106013, 61904195 and 62004214), by the Strategic Priority Research Program of the Chinese Academy of Sciences (grants nos. XDB30030000, XDA0330100 and XDA0330401), and also a part of a project that has received funding from the European Research Council (ERC) under the European Union’s Horizon Europe Research and Innovation programme grant agreement no. 101088591 (ORISON project).

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  1. These authors contributed equally: Di Geng, Kai Wang.

Authors and Affiliations

  1. State Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China

    Di Geng, Ling Li & Ming Liu

  2. State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, China

    Kai Wang

  3. ES&S, COSIC, ESAT, KU Leuven, Diepenbeek, Belgium

    Kris Myny

  4. Darwin College, University of Cambridge, Cambridge, UK

    Arokia Nathan

  5. Advanced Display Research Center, Department of Information Display, Kyung Hee University, Seoul, South Korea

    Jin Jang

  6. Thin Film Nano and Microelectronics Research Laboratory, Texas A&M University, College Station, TX, USA

    Yue Kuo

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Contributions

D.G. and K.W. wrote the paper together. L.L., K.M. and A.N. gave suggestions on each section. J.J. and Y.K. gave feedback on the requirements of TFTs for various applications. L.L. and M.L. supervised and coordinated the study. All authors read and revised the paper.

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Correspondence to Ling Li or Ming Liu.

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Geng, D., Wang, K., Li, L. et al. Thin-film transistors for large-area electronics. Nat Electron 6, 963–972 (2023). https://doi.org/10.1038/s41928-023-01095-8

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