Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • Matters Arising
  • Published:

Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes

Nature Electronics volume 6, pages 839–841 (2023)Cite this article

Subjects

The Original Article was published on 22 November 2023

replying to P. Wu Nature Electronics https://doi.org/10.1038/s41928-023-01043-6 (2023)

In response to our recent Article1 on the improvement of carrier mobilities in two-dimensional (2D) semiconductor transistors using rippled molybdenum disulfide (MoS2), Peng Wu (P.W.)2 suggested that the partially invasive probes used in our four-probe measurement set-up led to the overestimation of charge carrier mobility values in our devices. The main argument revolves around whether the mobility kink observed in our rippled devices arises from contact effects or an intrinsic property.

This is a preview of subscription content, access via your institution

Access options

Buy this article

  • Purchase on Springer Link
  • Instant access to full article PDF
Buy now

Prices may be subject to local taxes which are calculated during checkout

Fig. 1: Transport data of three-layer rippled-MoS2 devices.

Data availability

The data that support the findings of this study are available from the corresponding author upon reasonable request.

References

  1. Ng, H. K. et al. Improving carrier mobility in two-dimensional semiconductors with rippled materials. Nat. Electron. 5, 489–496 (2022).

    Article  Google Scholar 

  2. Wu, P. Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nat. Electron. https://doi.org/10.1038/s41928-023-01043-6 (2023).

  3. Choi, H. H., Cho, K., Frisbie, C. D., Sirringhaus, H. & Podzorov, V. Critical assessment of charge mobility extraction in FETs. Nat. Mater. 17, 2–7 (2017).

    Article  Google Scholar 

  4. Adam, S., Hwang, E. H. & Das Sarma, S. Scattering mechanisms and Boltzmann transport in graphene. Phys. E Low Dimens. Syst. Nanostruct. 40, 1022–1025 (2008).

    Article  Google Scholar 

  5. Shen, P. C. et al. Ultralow contact resistance between semimetal and monolayer semiconductors. Nature 593, 211–217 (2021).

    Article  Google Scholar 

  6. Cheng, Z. et al. How to report and benchmark emerging field-effect transistors. Nat. Electron 5, 416–423 (2022).

    Article  Google Scholar 

  7. Pang, C. S. et al. Mobility extraction in 2D transition metal dichalcogenide devices—avoiding contact resistance implicated overestimation. Small 17, 2100940 (2021).

    Article  Google Scholar 

  8. Liu, C. et al. Device physics of contact issues for the overestimation and underestimation of carrier mobility in field-effect transistors. Phys. Rev. Appl 8, 034020 (2017).

    Article  Google Scholar 

  9. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).

    Article  Google Scholar 

  10. Ma, J., Yang, R. & Chen, H. A large modulation of electron–phonon coupling and an emergent superconducting dome in doped strong ferroelectrics. Nat. Commun. 12, 2314 (2021).

    Article  Google Scholar 

  11. Jang, C. et al. Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering. Phys. Rev. Lett. 101, 146805 (2008).

    Article  Google Scholar 

  12. Wu, J. et al. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se. Nat. Nanotechnol. 12, 530–534 (2017).

    Article  Google Scholar 

  13. Yang, F. et al. Gate-tunable polar optical phonon to piezoelectric scattering in few-layer Bi2O2Se for high-performance thermoelectrics. Adv. Mater. 33, 2004786 (2021).

    Article  Google Scholar 

  14. Wu, J. et al. Low residual carrier concentration and high mobility in 2D semiconducting Bi2O2Se. Nano Lett. 19, 197–202 (2019).

    Article  Google Scholar 

  15. Quhe, R. et al. High-performance sub-10-nm monolayer Bi2O2Se transistors. Nanoscale 11, 532–540 (2019).

    Article  Google Scholar 

  16. Li, T. et al. A native oxide high-κ gate dielectric for two-dimensional electronics. Nat. Electron. 3, 473–478 (2020).

    Article  Google Scholar 

  17. Choi, H. H. et al. Accurate extraction of charge carrier mobility in 4-probe field-effect transistors. Adv. Funct. Mater. 28, 1707105 (2018).

    Article  Google Scholar 

  18. Baugher, B. W. H., Churchill, H. O. H., Yang, Y. & Jarillo-herrero, P. Intrinsic electronic transport properties of high quality monolayer and bilayer MoS2. Nano Lett. 13, 4212–4216 (2013).

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Materials Research and Engineering, Innovis, Agency for Science, Technology and Research, Singapore, Singapore

    Hong Kuan Ng, Ady Suwardi, Huajun Liu, Jing Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Kedar Hippalgaonkar & Jing Wu

  2. Department of Physics, National University of Singapore, Singapore, Singapore

    Hong Kuan Ng, Zhonghan Cao & Goki Eda

  3. State Key Laboratory of Integrated Chips and Systems, Frontier Institute of Chip and System, Fudan University, Shanghai, China

    Du Xiang

  4. Department of Materials Science and Engineering, National University of Singapore, Singapore, Singapore

    Ady Suwardi, Zhaogang Dong & Jing Wu

  5. Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore

    Guangwei Hu & Cheng-Wei Qiu

  6. Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong

    Ke Yang & Ming Yang

  7. NNU-SULI Thermal Energy Research Center (NSTER) & Center for Quantum Transport and Thermal Energy Science (CQTES), School of Physics and Technology, Nanjing Normal University, Nanjing, China

    Yunshan Zhao

  8. Institute of Optoelectronics, Fudan University, Shanghai, China

    Tao Liu

  9. International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, Japan

    Shisheng Li

  10. Department of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore

    Kedar Hippalgaonkar

Authors
  1. Hong Kuan Ng
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Du Xiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Ady Suwardi
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Guangwei Hu
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Ke Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yunshan Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Tao Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Zhonghan Cao
    View author publications

    You can also search for this author in PubMed Google Scholar

  9. Huajun Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  10. Shisheng Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  11. Jing Cao
    View author publications

    You can also search for this author in PubMed Google Scholar

  12. Qiang Zhu
    View author publications

    You can also search for this author in PubMed Google Scholar

  13. Zhaogang Dong
    View author publications

    You can also search for this author in PubMed Google Scholar

  14. Chee Kiang Ivan Tan
    View author publications

    You can also search for this author in PubMed Google Scholar

  15. Dongzhi Chi
    View author publications

    You can also search for this author in PubMed Google Scholar

  16. Cheng-Wei Qiu
    View author publications

    You can also search for this author in PubMed Google Scholar

  17. Kedar Hippalgaonkar
    View author publications

    You can also search for this author in PubMed Google Scholar

  18. Goki Eda
    View author publications

    You can also search for this author in PubMed Google Scholar

  19. Ming Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

  20. Jing Wu
    View author publications

    You can also search for this author in PubMed Google Scholar

Contributions

J.W. and M.Y. conceived the idea and designed the project. H.K.N. and D.X. prepared the substrates and fabricated devices. H.K.N. performed electrical transport characterization. Data analysis and interpretations were carried out by J.W., M.Y., H.K.N., K.Y., A.S., G.H., C.-W.Q. and all other co-authors. H.K.N., J.W. and M.Y. initiated the draft, with inputs and comments from all authors.

Corresponding authors

Correspondence to Ming Yang or Jing Wu.

Ethics declarations

Competing interests

The authors declare no competing interests.

Additional information

Publisher’s note Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ng, H.K., Xiang, D., Suwardi, A. et al. Reply to: Mobility overestimation in molybdenum disulfide transistors due to invasive voltage probes. Nat Electron 6, 839–841 (2023). https://doi.org/10.1038/s41928-023-01044-5

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/s41928-023-01044-5

This article is cited by

Search

Advanced search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing