To continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But further scaling of silicon-based devices and the development of alternative semiconductor channel materials that are compatible with current fabrication processes are challenging. Here we report atomic-layer-deposited indium oxide transistors with channel lengths down to 8.0 nm, channel thicknesses down to 0.50 nm and equivalent dielectric oxide thickness down to 0.84 nm. Due to the scaled device dimensions and low contact resistance, the transistors exhibit high on-state currents of 3.1 A mm–1 at a drain voltage of 0.5 V and transconductance of 1.5 S mm–1 at a drain voltage of 1.0 V. Our approach provides a promising alternative channel material for scaled transistors with back-end-of-line-processing compatibility.
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This work was supported in part by the Semiconductor Research Corporation (SRC) nCore Innovative Materials and Processes for Accelerated Compute Technologies (IMPACT) Center and in part by the Air Force Office of Scientific Research (AFOSR) and SRC/Defense Advanced Research Projects Agency (DARPA) Joint University Microelectronics Program (JUMP) Applications and Systems-driven Center for Energy Efficient integrated Nano Technologies (ASCENT) Center.
The authors declare no competing interests.
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Si, M., Lin, Z., Chen, Z. et al. Scaled indium oxide transistors fabricated using atomic layer deposition. Nat Electron 5, 164–170 (2022). https://doi.org/10.1038/s41928-022-00718-w
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